Bias voltage-dependent photoinduced current and photoluminescence in organometal perovskite layers on silicon substrates

Sekerbayev, K. S.; Shabdan, Ye.; Mikhailova, Svetlana; Pryadun, V.V.; Taurbayev, Ye. T.; Taurbayev, T. I.; Timoshenko, V. Yu.

doi:10.1016/j.physb.2020.412025

Cited by 2 publications

(3 citation statements)

References 17 publications

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“…Perovskite-silicon tandem solar cells are a promising way for overcoming the single-cell efficiency limit. To date, only a few studies were dedicated to a direct investigation of immediate perovskite-silicon interface [1][2][3][4][5][6]. While in most tandem solar cell designs these two materials are not in direct contact, knowledge of the carrier transport and band alignment at their interface would allow for a better understanding of their compatibility and attainable performance levels, guiding the development of perovskite-silicon tandem solar cells in monolithic device architectures with adapted tunnel-recombination junctions between the two sub-cells.…”

Section: Introductionmentioning

confidence: 99%

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

et al. 2022

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In this study we analysed halide perovskite films deposited directly on crystalline silicon by means of two set-ups using different operating modes of the surface photovoltage (SPV) methods, i.e., the Kelvin probe force microscopy (KPFM) and the metal-insulator-semiconductor (MIS) technique. The KPFM allowed to visualize surface potential distribution on a microscale while MIS technique allowed to study SPV spectral dependence. We studied wavelength dependent SPV of these samples, which allowed us to effectively vary the probe depth in the sample and discern the contribution from each interface to the overall effect measured under white light illumination. Depending on where the photocarriers are generated, different SPV signals are observed: at the perovskite/Si interface, the signal depends on Si doping type, while at the surface the SPV is always negative indicating downward surface band bending. This is confirmed by analysing SPV phase measured in the AC MIS mode. In addition, distinction between slow and fast processes contributing to measured SPV was possible. It has been observed, that with decreasing the illumination wavelength, the processes causing SPV become slower, which can indicate that high energy photons not only generate electronic photocarriers but can also induce chemical changes with creation of defects or ionic species that also modify the measured SPV.

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Section: Introductionmentioning

confidence: 99%

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

et al. 2022

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“…The linear dependence on excitation power indicates a one-photon excitation process and is typical for NCs [12,44]. The observed non-linear rise of the PL intensity of the M series samples at excitation intensity > 1 kW/cm 2 can be related to a contribution of the bimolecular mechanism of charge carrier recombination in interconnected MALB NCs [42]. This mechanism does not seem to be efficient in smaller NCs because of a larger influence of the surface trapping and an additional enhancement of the Auger recombination due to the breaking the phonon selection rules [43].…”

Section: Series Of Samplesmentioning

confidence: 76%

“…The sample with 6 nm sized NCs exhibited the PL band shift to the high energy region by ~0.1 eV compared to that for the samples of the L series. This PL band shift to the high energy region is related to the quantum confinement effect due to the small size of the MALB NCs [42]. The observed PL spectra broadening is related to the size distribution of the NCs and the electron-phonon interaction [43].…”

Section: Series Of Samplesmentioning

confidence: 88%

Size-Dependent Phonon-Assisted Anti-Stokes Photoluminescence in Nanocrystals of Organometal Perovskites

et al. 2022

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Anti-Stokes photoluminescence (ASPL), which is an up-conversion phonon-assisted process of the radiative recombination of photoexcited charge carriers, was investigated in methylammonium lead bromide (MALB) perovskite nanocrystals (NCs) with mean sizes that varied from about 6 to 120 nm. The structure properties of the MALB NCs were investigated by means of the scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy. ASPL spectra of MALB NCs were measured under near-resonant laser excitation with a photon energy of 2.33 eV and they were compared with the results of the photoluminescence (PL) measurements under non-resonant excitation at 3.06 eV to reveal a contribution of phonon-assisted processes in ASPL. MALB NCs with a mean size of about 6 nm were found to demonstrate the most efficient ASPL, which is explained by an enhanced contribution of the phonon absorption process during the photoexcitation of small NCs. The obtained results can be useful for the application of nanocrystalline organometal perovskites in optoelectronic and all-optical solid-state cooling devices.

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Bias voltage-dependent photoinduced current and photoluminescence in organometal perovskite layers on silicon substrates

Cited by 2 publications

References 17 publications

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

Size-Dependent Phonon-Assisted Anti-Stokes Photoluminescence in Nanocrystals of Organometal Perovskites

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