Biaxial anisotropy for memory applications

Pitke, M.V.

doi:10.1007/bf01691529

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…The insets of figures 5(a)-(g) show the corresponding angular-dependent remanence polar plots. When coherently grown onto an orthorhombic substrate such as NGO (110), the in-plane lattice parameters of LSMO match with the in-plane lattice of NGO (110) substrate, inducing anisotropic in-plane strain due to dissimilarities in lattice constants along [1][2][3][4][5][6][7][8][9][10], and the [001] in-plane directions [12]. Due to this anisotropic in-plane strain, the easy axis magnetization direction preferably aligns with the direction of higher stress [1][2][3][4][5][6][7][8][9][10], and the hard axis along the [001] direction.…”

Section: Resultsmentioning

confidence: 99%

“…Depending on the application, different magnetic anisotropic systems are to be chosen. For example, the uniaxial (two-fold) magnetic anisotropic system is used in developing magnetic field sensors based on their anisotropic magnetoresistive (AMR) property [3] and biaxial (four-fold) magnetic anisotropic system can be used in four state memory and logic devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films

Chaluvadi¹,

Ajejas²,

Orgiani³

et al. 2020

J. Phys. D: Appl. Phys.

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The crystal structural quality and the strain induced by the substrate strictly impose the magnetic and transport properties of La 0.67 Sr 0.33 MnO 3 (LSMO) films. In particular, the magnetic anisotropy (MA) of epitaxial LSMO can be finely tuned by varying its thickness and by choosing single crystal substrates with suitable lattice mismatch with the film. Here, we have deposited LSMO films with thicknesses in the 12-50 nm range by pulsed laser deposition on different single crystal substrates inducing either compressive or tensile in-plane strain on the manganites. The epitaxial quality of films was quantified by ω-scans around (002) peak with full-width half-maximum (FWHM) values as low as 0.08° for films on the nearly matched NGO (110) substrate to 1.4° films on high mismatched MgO (001) substrate. As the epitaxial strain in thin-film increases, a significant reduction in metal-insulation transition (MIT) temperature (T p) was observed. The magnetic properties of the films probed by Kerr magnetometry show that the symmetry of the room temperature MA varies significantly as a function of both strain and thickness. Specifically, we observed pure uniaxial MA on NGO (110) and pure biaxial MA on STO buffered MgO (001), whereas a spin reorientation from uniaxial in-plane to out-of-plane on LSAT (001) and uniaxial to nearly isotropic in-plane on STO (001) substrate as the film thickness is increased. We provide an efficient tool to tune the MA according to the specific spintronic application targeted.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films

Chaluvadi¹,

Ajejas²,

Orgiani³

et al. 2020

J. Phys. D: Appl. Phys.

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“…8 While a defined uniaxial anisotropy is essential for magnetic field sensors based on AMR, 7 a biaxial anisotropy, which provides four stable magnetization states, has capability to encode more information (four binary bits: "00", "01", "10", "11"), and can be used in memory and logic devices. 9,10 However, especially in half-metallic perovskite compounds with four-fold magnetocrystalline anisotropy in bulk, it results difficult to avoid either strain (induced by the substrate) or shape uniaxial anisotropy in thin films. 11,12 Among manganites, La0.67Sr0.33MnO3 (LSMO) has arisen special interest for its peculiar properties such as nearly 100% spin polarization and room temperature (RT) ferromagnetism with Curie temperature of about Tc~370 K, hence, enabling RT spintronic applications.…”

mentioning

confidence: 99%

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Chaluvadi

Ajejas

Orgiani

et al. 2018

Applied Physics Letters

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Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the system. Here, we investigate by means of vectorial Magneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3 (LSMO) thin films that exhibit at room temperature pure biaxial magnetic anisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (STO) buffer. In this way, we can avoid unwanted uniaxial magnetic anisotropy contributions that may be detrimental for specific applications. The detailed study of the angular evolution of the magnetization reversal pathways, critical fields (coercivity and switching) allows for disclosing the origin of the magnetic anisotropy, which is magnetocrystalline in nature and shows four-fold symmetry at any temperature.Half-metallic perovskite oxides promise great advantages over conventional spintronics metallic materials for applications such as magnetic sensors, magnetic random access memory (MRAM), magnetic tunnel junctions (MTJs) and domain wall race-track memories. 1 Perovskite oxides, in general, appear to be a new contender for many novel applications that were considered traditionally beyond its range. 2 The conduction mechanism in these materials, in fact, strongly depends on the interplay between orbital and spin degrees of freedom 3 that may be exploited to add multiferroic or ferroelectric functionalities. [4][5][6] The complexity of such mechanism, however, can determine entangled magneto transport response becoming in some cases undesired. For example, it has been seen that a switchable anisotropic magnetoresistance (AMR) response in manganites may be hidden by the colossal magnetoresistance (CMR) if the magnetic anisotropy of the system is not accurately designed. 7 Irrespective of the applications, one of a)

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Unraveling atomistic and electronic origins of multiaxial magnetic anisotropy

Liu,

Li,

Feng

et al. 2024

Sci. China Phys. Mech. Astron.

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Biaxial anisotropy for memory applications

Cited by 5 publications

References 6 publications

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Unraveling atomistic and electronic origins of multiaxial magnetic anisotropy

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Biaxial anisotropy for memory applications

Cited by 5 publications

References 6 publications

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0.67Sr0.33MnO3 films

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0.67Sr0.33MnO3 films

Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications

Unraveling atomistic and electronic origins of multiaxial magnetic anisotropy

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Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La_0.67Sr_0.33MnO₃ films