2010
DOI: 10.1021/nn1011978
|View full text |Cite
|
Sign up to set email alerts
|

Biaxially Textured Al Film Growth on CaF2 Nanostructures toward a Method of Preparing Single-Crystalline Si Film on Glass Substrates

Abstract: We report the room temperature growth of biaxially textured Al films and further demonstrate the use of these Al films in preparing single-crystalline Si layers on glass substrates. The formation of the biaxial texture in Al film relies on the existence of the CaF(2) buffer layer prepared using oblique angle physical vapor deposition, which consists of single-crystalline nanorods with caps that are in the form of inverted nanopyramids. The single-crystalline Si film was obtained upon crystallization of the amo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
9
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 10 publications
(9 citation statements)
references
References 31 publications
0
9
0
Order By: Relevance
“…Morphology and texture directly control many important physical properties such as optical, magnetic, and electrical properties of the films. A recent example is the intense interest in creating biaxially oriented films as a buffer layer or template for subsequent growth of highly oriented (both out-of-plane and in-plane) high T c superconducting films 1-3 or semiconductor films [4][5][6][7][8][9] for electronics and optoelectronics applications. A particular technique to create a biaxial film on an arbitrary substrate (including amorphous surface) is by the inclined substrate deposition 1-3 or oblique angle deposition technique.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Morphology and texture directly control many important physical properties such as optical, magnetic, and electrical properties of the films. A recent example is the intense interest in creating biaxially oriented films as a buffer layer or template for subsequent growth of highly oriented (both out-of-plane and in-plane) high T c superconducting films 1-3 or semiconductor films [4][5][6][7][8][9] for electronics and optoelectronics applications. A particular technique to create a biaxial film on an arbitrary substrate (including amorphous surface) is by the inclined substrate deposition 1-3 or oblique angle deposition technique.…”
Section: Introductionmentioning
confidence: 99%
“…A particular technique to create a biaxial film on an arbitrary substrate (including amorphous surface) is by the inclined substrate deposition 1-3 or oblique angle deposition technique. 5,6,9 In this technique, the incident flux strikes the substrate at an angle with respect to the substrate normal. For a given material, when deposited within an appropriate substrate temperature range, a texture selection can occur to create a film with preferred out-of-plane and in-plane orientations, or a biaxially orientated film.…”
Section: Introductionmentioning
confidence: 99%
“…The latter results in formation of low energy grain boundaries, which leads to a microstructure that resembles that of single crystals. 1 This makes biaxially textured films suitable as buffer layers for highly oriented superconducting [1][2][3] and semiconducting [4][5][6] films. The majority of polycrystalline films are today synthesized by vapor condensation with the vapor flux typically arriving parallel with respect to the substrate surface normal at kinetically limited growth conditions.…”
mentioning
confidence: 99%
“…In practice this means that the film structure is similar to that of a single crystal, making biaxially aligned films suitable as cost-effective large area buffer layers for superconducting [25,26] and semiconducting [27][28][29] films. To explain the development of the in-plane alignment an evolutionary growth model has been proposed [24].…”
Section: Film Formationmentioning
confidence: 99%
“…Films with this type of biaxial alignment typically exhibit small miss-orientations between grains that lead to low-energy grain boundaries and a microstructure similar to that of single crystals. They are thus applied as cost-effective large area buffer layers for superconducting [25,26] and semiconducting [27][28][29] films. In order to enable formation of a biaxial alignment, growth needs to take place at kinetically limited conditions where only surface diffusion is active [24].…”
Section: Biaxial Alignmentmentioning
confidence: 99%