BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

Abstract

We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB up to 140GHz, and isolation is better than 15dB in the frequency range of 90 to 140GHz. The switch-on time is measured as 10s. No performance degradation was observed after 5 billion cold switching cycles demonstrating the high reliability of the switch. An on-chip charge-pump (CP) circuit is realized using enhanced PMOS transistor to excite the switch with an output voltage of up to 50V and a rise time of 2s. ©2010 IEEE

30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology

“…A higher switch capacitance to ground (200-250 fF) exists when the MEMs switch is in the OFF state (the membrane is in the down-state position) which results in a higher attenuation (isolation) between the RF ports. The on and off switching times are around 10 μs [21].The switching reliability of the IHP SiGe MEMS switches has been demonstrated in life cycle tests showing 5-10 billion switch cycles [22].…”

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

“…To push the performance of silicon based radiometers further beyond the current state-of-the-art we are considering a potential use of low-loss RF-MEMS switches developed by the SiGe foundry IHP (with 0.5 dB of losses up to 140 GHz) [7]. A 110 GHz LNA design made in IHP's 0.13 μm SiGe BiCMOS technology with 20 dB of gain/4 dB NF, thus approaching the RF performance of some III-V based W-band LNAs [1,8], was recently reported [9].…”

“…If we assume an NF of 5 dB (e.g. 1 dB of loss for a MEMS SPDT switch and NF LNA = 4 dB [7,9]) and given that 20-30 dB is the highest stable receiver (LNA) gain in the specified frequency bandwidth then the detector should have a NEP ≤ 0.1-1 pW/Hz 1/2 . A main benefit by using the heterodyne architecture (see Fig.…”

Integrated Magnetic MEMS Relays: Status of the Technology

“…Work has been published on low cost packaging solutions by using backside integration techniques [22], optimized packaging processes for minimal influence on the device performance [23], innovative liquid crystal polymer packaging [69], and wafer level Low Temperature Co-fired Ceramic (LTCC) cap packaging techniques [70]. Novel packaging techniques are continually being sought after to help ensure the required functionality and dependability, while avoiding detrimental effects such as excessive damping and stiction [71], and equally important, minimizing the overall production costs.…”

“…One category of applications that can justify the increased processing complications and costs associated with the manufacturing of MEMS switches is the field of portable wireless systems, where greater RF performance in the range of frequencies from 100 MHz to over 100 GHz (i.e., low insertion loss and low power consumption over a wide frequency range) can contribute to a reduction of the DC (direct current) power dissipation [12,22,[72][73][74][75]. Another potential application is the replacement of the switching matrix in satellites, which currently employ discrete coaxial switches.…”