2012
DOI: 10.1143/apex.5.111201
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Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs

Abstract: We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen–nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton an… Show more

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Cited by 8 publications
(6 citation statements)
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“…The X emission saturated faster than the XX emission because the radiative lifetime of excitons is longer than that of biexcitons and the supply rate of excitons is larger than that of biexcitons. A similar result was obtained in our previous paper concerning biexciton luminescence from individual states. Since the energy of the XX emission is 0.8 meV lower than that of the X emission, the biexciton binding energy for the single quantum‐confined structure in N‐polar InGaN/GaN MQW is found to be 0.8 meV.…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…The X emission saturated faster than the XX emission because the radiative lifetime of excitons is longer than that of biexcitons and the supply rate of excitons is larger than that of biexcitons. A similar result was obtained in our previous paper concerning biexciton luminescence from individual states. Since the energy of the XX emission is 0.8 meV lower than that of the X emission, the biexciton binding energy for the single quantum‐confined structure in N‐polar InGaN/GaN MQW is found to be 0.8 meV.…”
Section: Resultssupporting
confidence: 91%
“…Entangled photon pairs are expected to play a significant role in the quantum information processing, including quantum cryptography, quantum teleportation, and quantum computation . Among several candidates for generating entangled photon pairs, the cascade decay of biexcitons in semiconductor nanostructures has been proposed as a source of polarization‐entangled photon pairs …”
Section: Introductionmentioning
confidence: 99%
“…Recently, N doping to a single lattice plane by surface nitridation were reported in the field of MBE of GaAs‐based materials . This is referred to as N δ ‐doping.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, (In)GaAsN is expected to be a semiconductor material for optoelectronic device applications, such as long‐wavelength semiconductor lasers with superior characteristics and high efficiency solar cells . In addition to the band gap reduction, sharp emission lines are obtained from isoelectronic traps due to nitrogen–nitrogen (NN) pairs in dilute GaAsN alloys, which are promising candidates for generating single photons or entangled photon pairs .…”
Section: Introductionmentioning
confidence: 99%