Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors

Euteneuer, A.; Möbius, J.; Rettig, R.; Mayer, Ernest; Hofmann, Martin R.; Stolz, W.; Göbel, E. O.; Rühle, W. W.

doi:10.1103/physrevb.56.r10028

Cited by 11 publications

(6 citation statements)

References 21 publications

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“…The pseudo two-dimensional biexciton has a much larger binding energy compared to the bulk biexciton. An earlier work showed that the biexciton binding energy increases more rapidly than the excitonic binding energy when confinement is enhanced 76 . In the case of the monolayer MoS 2 , Mai et.…”

Section: B Biexcitonsmentioning

confidence: 99%

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Exciton complexes in low dimensional transition metal dichalcogenides

Thilagam¹

2014

Journal of Applied Physics

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We examine the excitonic properties of layered configurations of low dimensional transition metal dichalcogenides (LTMDCs) using the fractional dimensional space approach. The binding energies of the exciton, trion and biexciton in LTMDCs of varying layers are analyzed, and linked to the dimensionality parameter α, which provides insight into critical electro-optical properties (relative oscillator strength, absorption spectrum, exciton-exciton interaction) of the material systems. The usefulness of α is highlighted by its independence of the physical mechanisms underlying the confinement effects of geometrical structures. Our estimates of the binding energies of exciton complexes for the monolayer configuration of transition metal dichalcogenides suggest a non-collinear structure for the trion and a positronium-molecule-like square structure for the biexciton.

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Section: B Biexcitonsmentioning

confidence: 99%

“…The energy of the biexciton, a four-body system of two electrons and two holes, is dependent on the degree of its confinement 61,75 and the electron-to-hole ratio σ = me m h of effective masses 53,60 . Confinement effects play an important role in strengthening the biexciton binding energy 61 .…”

Section: B Biexcitonsmentioning

confidence: 99%

Exciton complexes in low dimensional transition metal dichalcogenides

Thilagam¹

2014

Journal of Applied Physics

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“…At first, mainly GaAs-based heterostructures were examined 6,7 despite their small biexciton binding energy. [8][9][10][11] With the rising quality of II-VI compound semiconductors such as ZnSe-based heterostructures, the importance of biexcitons for the interpretation of the nonlinear optical properties of semiconductor nanostructures became more obvious. Because of the larger binding energies the biexciton resonance could be clearly separated from the exciton resonance and the influences of continuum states could often be excluded.…”

Section: Introductionmentioning

confidence: 99%

Energy renormalization and binding energy of the biexciton

et al. 2003

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We deduce the energy renormalization of the biexciton resonance in ZnSe quantum wells from polarization and intensity dependent pump-probe spectroscopy in the coherent regime. We confirm that the biexciton renormalization is exactly what one would expect from a compound particle of two excitons in opposite circular polarization states. Since the biexciton binding is measured with respect to the exciton resonance one has to consider the renormalization of the latter resonance as well. We present an exact method to determine the real biexciton binding energy using the low-excitation extrapolation of the exciton-to-biexciton transition energy.

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“…More recently, the biexciton binding energy has been measured in GaAs quantum well 15 and found to be one order of magnitude larger than in bulk samples, a result supported by calculations done one year later 16 . Since then, other aspects of biexcitons in confined structures, such as optical enhancement in biexciton formation 17,18 and the influence of dimensionality on the biexciton binding 15,19,20 , have been studied. Biexcitons in quantum wires have also been reported 21 .…”

Section: = 4rmentioning

confidence: 99%

Electronic structure and absorption spectrum of biexciton obtained by using exciton basis

2013

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We approach the biexciton Schrödinger equation not through the free-carrier basis as usually done, but through the free-exciton basis, exciton-exciton interactions being treated according to the recently developed composite boson many-body formalism which allows an exact handling of carrier exchange between excitons, as induced by the Pauli exclusion principle. We numerically solve the resulting biexciton Schrödinger equation with the exciton levels restricted to the ground state and we derive the biexciton ground state as well as the bound and unbound excited states as a function of hole-to-electron mass ratio. The biexciton ground-state energy we find, agrees reasonably well with variational results. Next, we use the obtained biexciton wave functions to calculate optical absorption in the presence of a dilute exciton gas in quantum well. We find a small asymmetric peak with a characteristic low-energy tail, identified with the biexciton ground state, and a set of large peaks associated with biexciton unbound states, i.e., exciton-exciton scattering states.

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Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors

Cited by 11 publications

References 21 publications

Exciton complexes in low dimensional transition metal dichalcogenides

Exciton complexes in low dimensional transition metal dichalcogenides

Energy renormalization and binding energy of the biexciton

Electronic structure and absorption spectrum of biexciton obtained by using exciton basis

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