Bifacial 8.3%/5.4% front/rear efficiency ZnO:Al/n-Si heterojunction solar cell produced by spray pyrolysis

Унтила, Г.Г.; Кост, Т.Н.; Чеботарева, А.Б.

doi:10.1016/j.solener.2016.01.028

Cited by 31 publications

(4 citation statements)

References 61 publications

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“…This results the efficiencies of both sides are nearer to each other. The computed efficiency is nearly same as the experimental value of ZnO-Si SIS solar cell as reported by Untila et al [14] 5.4%. Experimental results reported by other groups of scientists also compliment the computational value of this literature [16,17].…”

Section: Einstein's Equation Was Employed To Find Out Coefficient Of Diffusion In Equation 3 the Built In Potential Atsupporting

confidence: 87%

“…Thus the dark saturation current density for both the side illumination should be theoretically same. Untila et al also reported the experimental data for SIS hetero junction solar cells which compliment the above statement [14,15]. The dark saturation current is expressed as a function of built in potential of the dual SIS solar cell in equation 3 .…”

Section: mentioning

confidence: 61%

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Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

Dasgupta

Mondal

Gangopadhyay³

2022

Silicon

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The major challenge of PV cell design and installation has always been to find the optimum cost per energy and area of installation of solar panels. In densely populated and high-yielding agricultural country like India land acquisition is becoming an issue. Moreover the consisting demand to deduce the cost per energy indulges the worldwide scientists to design more efficient solar cells with low production cost. In developing countries scientists and engineers are trying to find an amicable solution to meet up these problems. In this paper the mathematical modelling of a dual SIS bifacial vertically mounted solar panel has been proposed to mitigate the energy and land area crisis in countries of Indian subcontinent, south Asia and elsewhere. The SIS (Semiconductor-Insulator-Semiconductor) technology was chosen for its extremely low thermal budget and less complicated production procedure. A bifacial solar cell with SIS junction in both sides was modelled. The front surface SIS junction was considered ZnO-SiO2-Si(p-type) while the back surface junction was considered Si(p type)-Al2O3-SnO. The efficiency for front and back surface was calculated as 5.64% and 5.58% respectively. We have further considered the effect of albedo from two different surfaces (soil and concrete) and the efficiencies of front and back surface for these albedo radiations. The angle of installation was optimized for both these effects. Considering both direct and albedo the all-day efficiency was calculated as 22.47% for a sunny day tropical region.

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Section: Einstein's Equation Was Employed To Find Out Coefficient Of Diffusion In Equation 3 the Built In Potential Atsupporting

confidence: 87%

Section: mentioning

confidence: 61%

Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

Dasgupta

Mondal

Gangopadhyay³

2022

Silicon

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“…As a result the efficiency is expected to raise up to ~6.7% from ~5.2%. The result for single SIS solar cell is quite close by the experimental result obtained by Untila et al[40]. The improvement of the J SC is the result of the change in collection probability for p-p + depletion region at p Si-SnO junction.…”

supporting

confidence: 90%

Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Dasgupta

Mondal

Ray

et al. 2021

Silicon

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For the last few decades scientists across the world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable in the fabrication of these conventional solar cells. Back in 1970s scientists proposed an alternative solar cell technology with Schottky barrier which can cut down the burden on thermal budget of manufacturing process. Later the metalsemiconductor Schottky barrier further modified with hetero junction semiconductor-semiconductor solar cells. A thin intrinsic layer sandwiched between semiconductor-semiconductor junctions can repair the junction defect efficiently. These SIS solar cells became popular for its low thermal budget and considerable efficiency. In this paper we have tried to propose a mathematical model of a novel dual side SIS solar cell which is basically a multi junction solar cell. We have introduced a third semiconductor layer (SnO) at the back side of the cell which can provide an inversion layer much similar to PERT solar cell. This structure is first of its kind and thus a theoretical analysis is required before implementation. We have studied the effect of this back field on the performance of the cell and propose a mathematical model based on reciprocity theorem of charge collection. The efficiency of conventional ZnO-pSi SIS solar cell was computed ~5.2% while the back SnO p + layer is expected to enhance the efficiency up to ~7.9% according to our mathematical model. We have concluded with significant mathematical justification to implement this structure with proposed electro-chemical experiments.

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“…It was anticipated that an overall conversion efficiency of 19% and fill factor of 81% can be achieved using the proposed structure. Following this, several groups reported different experimental results [8][9][10][11][12] for the n-ZnO/p-Si solar cell with the best efficiency of 14% achieved by Pietruszka et al recently [13]. Also, few groups have recently reported simulation results optimizing different parameters of ZnO/Si solar cell.…”

Section: Introductionmentioning

confidence: 97%

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

et al. 2019

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For further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has attracted much attention of the research community in recent years. This paper reports the influence of bandgap and/or electron affinity tuning of zinc oxide on the performance of n-ZnO/p-Si single heterojunction photovoltaic cell using PC1D simulations. The simulation results reveal that the open circuit voltage and fill factor can be improved significantly by optimizing valence-band and conduction-band off-sets by engineering the bandgap and electron affinity of zinc oxide. An overall conversion efficiency of more than 20.3% can be achieved without additional cost or any change in device structure. It has been found that the improvement in efficiency is mainly due to reduction in conduction band offset that has a significant influence on minority carrier current.

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Bifacial 8.3%/5.4% front/rear efficiency ZnO:Al/n-Si heterojunction solar cell produced by spray pyrolysis

Cited by 31 publications

References 61 publications

Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

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