2018
DOI: 10.1063/1.5049311
|View full text |Cite
|
Sign up to set email alerts
|

Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

Abstract: Abstract. The concepts of bifaciality and shingling interconnection allow for a boost in output power density pout for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called "p-type shingled passivated edge, emitter, and rear (pSPEER)". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
5
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(5 citation statements)
references
References 11 publications
0
5
0
Order By: Relevance
“…After presenting experimental results for R int for two different ECAs in the previous section, the simulations in Section 3. and Balioziant et al 12 C and ECA D in terms of CTM loss according to Figure 3. On an industrial production level, a discrepancy of ΔR int = 4 mΩ would thus be highly relevant.…”
Section: Final Discussionmentioning
confidence: 78%
See 3 more Smart Citations
“…After presenting experimental results for R int for two different ECAs in the previous section, the simulations in Section 3. and Balioziant et al 12 C and ECA D in terms of CTM loss according to Figure 3. On an industrial production level, a discrepancy of ΔR int = 4 mΩ would thus be highly relevant.…”
Section: Final Discussionmentioning
confidence: 78%
“…Finally, a new approach to experimentally determine R int by evaluating the dark I-V curve of three-shingle-stings is tested. In a first step, gallium-doped monofacial monocrystalline silicon G1 PERC shingle host cells fabricated in mass production are separated by a laser scribe and mechanical cleaving (LSMC) 12,23 process. Form the thereby obtained shingles, only the middle pieces that are full square shingles with nominal size A shingle = (158.75 Á 31.75) mm 2 are taken.…”
Section: Experimental Determination Of the Interconnection Resistancementioning
confidence: 99%
See 2 more Smart Citations
“…In 2019, Fraunhofer ISE introduced the post-metallization passivated edge technology (PET) and demonstrated edge passivation on PERC shingle cells. 7,26 The PET consists of the deposition of a passivation layer after cell separation, for example, an aluminum oxide (Al 2 O 3 ) layer-which is known for excellent passivation quality 27 -with subsequent activation of the same by means of elevated temperature exposure, also referred to as annealing.…”
mentioning
confidence: 99%