Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Abstract

A bifunctional device capable of simultaneously achieving dielectric energy storage and resistive switching is first designed and fabricated based on a conventional metal–insulator–metal (MIM) structure. Typically, Al/TaOx/Pt structure shows a high breakdown strength up to 5.07 MV cm−1 and a relatively high‐energy density of 27.6 J cm−3. Meanwhile, the leakage current of the MIM structure is at the sub‐nanoampere level and exhibits the typical characteristic of analog switching under an applied voltage of about 12 volts. The energy density and the switching current in the developed integrated MIM structure are comparable to the corresponding performances in discrete binary oxides capacitors with linear dielectric and oxide‐based memristors, respectively. Furthermore, synaptic functions with short‐term and long‐term plasticities can be realized. Both of the device properties are found to be correlated to the role of the AlOx interfacial layer between the Al electrode and the dielectric layer, which provides the possibility of coupling between these two functions coexisting in the MIM structure. The prototypical bifunctional device offers a great prospect for multifunctional energy and neuromorphic applications.

Cost-effective preparation of layered tantalum oxynitrides for visible light-driven photocatalysis

“…5a), with the binding energies (BEs) of 24.8 and 25.9 eV corresponding to Ta 4+ /Ta 3+ , 23.01 eV corresponding to Ta 2+ , and the others of 26.18 and 28.06 eV corresponding to 4f 7/2 and 4f 5/2 of Ta 5+ , respectively. 44 Similarly, the same phenomenon was found in KCa 2 Ta 3 O 10 and its oxynitride in the Ta 4f spectra (Fig. 5b).…”

Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities

“…However, applying a train of input pulses is another valuable method to create a CF between the anode and cathode of ECM. Like a biological synapse, which functions based on the transmission of Ca 2+ cations throughout the ion channel, 45 our device responds to the applied spikes by Zr 4+ cations. Therefore, we manipulate the Zr dynamics of CF to emulate the Ca 2+ dynamics of a biological synapse ( Fig.…”

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

“…From the fitting results, we can draw the conclusion that the number of successive stimulations has a direct impact on learning efficiency. The extracted relaxation times suggest the successful emulation of the LTP effect since a long-lasting memory performance is achieved and is enhanced as we increase the number of the pre-synaptic signals [42]. From a physical point of view, we can argue that the formation of relatively big and robust CF that cannot self-rupture, in terms of effective diameter distribution, is the driving force for this effect [43].…”