Bifunctional Hydroxylamine Hydrochloride Incorporated Perovskite Films for Efficient and Stable Planar Perovskite Solar Cells

Abstract

Research on the addition of suitable materials into perovskite film for improved quality is important to fabricate efficient and stable perovskite solar cells. An attempt to enhance the quality of perovskite is performed by incorporation of a bifunctional hydroxylamine hydrochloride (HaHc) into pristine perovskite solution. On the one hand, the chloride ion in HaHc changes the crystallization kinetic and defect state of the perovskite film and a high-quality perovskite film with larger grain size and lower defect density is obtained. Perovskite solar cell (PSC) with HaHc additive exhibit a power conversion efficiency (PCE) of 18.69% with less hysteresis, which is obviously higher than that of pristine cells (16.85%). On the other hand, the hydroxyl group in HaHc can form a strong hydrogen bond with iodide ion in perovskite film to impede the decomposition of the film when under thermal annealing or storing in air. As a result, the PSCs with HaHc additive show superior thermal and air stability to the pristine devices. These results indicate that the addition of HaHc in perovskite film can greatly improve the performance of PSCs as well as their thermal and air stability.

NbF5: A Novel α‐Phase Stabilizer for FA‐Based Perovskite Solar Cells with High Efficiency

“…To investigate the effect of NbF 5 additive on the electronic property of perovskite film, the space charge–limited current technique is applied to evaluate quantitatively the electron trap‐state density using a device structure of fluorine‐doped tin oxide (FTO)/TiO 2 /perovskite(NbF 5 )/[6,6]‐phenyl C61 butyric acid methyl ester (PCBM)/Ag . Figure a,b shows the typical dark current–voltage characteristics of the perovskite without and with NbF 5 additive, respectively.…”

Europium and Acetate Co‐doping Strategy for Developing Stable and Efficient CsPbI2Br Perovskite Solar Cells

“…The typical dark J – V characteristics of the electron‐only devices are shown in Figure S7, Supporting Information. The trap densities ( n trap ) are calculated by the equation of n trap = (2 V TFL εε 0 )/( eL 2 ), where V TFL is the trap‐filled limit voltage, ε and ε 0 are the relative dielectric constant for CsPbI 2 Br perovskite and the vacuum permittivity, respectively. e is the electron charge and L is thickness of the CsPbI 2 Br perovskite film .…”

Simultaneous Cesium and Acetate Coalloying Improves Efficiency and Stability of FA0.85MA0.15PbI3 Perovskite Solar Cell with an Efficiency of 21.95%

“…To investigate the effect of CsAc alloying on the electron trap density of perovskite film, the J–V characteristics of electron‐only devices (glass/fluorine‐doped tin oxide (FTO)/TiO 2 /perovskite/PCBM/Ag) are measured, and the trap densities are estimated by the space charge limited current (SCLC) technique . The trap‐state density ( n trap ) is calculated using the equation n trap = (2 εε 0 V TFL )/( eL 2 ), where ε is relative dielectric constant of perovskite and ε 0 is the vacuum permittivity.…”