Upgrading single S-scheme heterojunctions to multi-Sscheme ones through implanting another component provides a promising means of simultaneously optimizing the charge transport dynamics and surface reaction kinetics, which, however, is challenged by the uncontrollable loading position of the third component. Herein, a componentdirected growth strategy is implemented for deliberate deposition of ZnIn 2 S 4 onto diverse locations of In 2 O 3 /CdS, constructing twin and triple S-scheme heterojuctions with distinct charge transfer pathways. The photocatalytic performances of as-synthesized ternary heterojunctions in CO 2 reduction coupled with H 2 O oxidation strongly correlate with the location of ZnIn 2 S 4 . The selective coating of CdS with ZnIn 2 S 4 expedites the charge transfer and separation, ensures the large-area exposure of In 2 O 3 for smooth H 2 O oxidation, modulates the reaction energy barriers for promoted CO 2 -to-CO transformation while suppressing side H 2 evolution, and raises the electron density and proton supply for CO 2 methanation. Consequently, In 2 O 3 /CdS@ZnIn 2 S 4 achieves optimum activities and selectivities in CO and CH 4 production, along with nearly stoichiometric O 2 evolution. This work not only offers valuable insights for the rational design of three-component heterojunction photocatalysts with multiple S-scheme charge transfer pathways but also opens up a fresh avenue to precisely regulate the loading position of the third component for enhancing the overall efficiency of photoredox catalysis.