Big Data Storage and Analysis

Dhanda, Namrata

doi:10.1002/9781119792826.ch13

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…The recent exponential growth in unstructured data has led to a significant increase in the amount of data required for efficient processing [ 1 , 2 ]. However, conventional von Neumann computing systems have limitations that result in slow data processing owing to the bottleneck effect caused by the sequential transfer of data between the central processing unit and memory [ 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Kim,

Han,

Cho

et al. 2024

Nanomaterials

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A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining a high-density integration. A simple metal–insulator–metal (MIM)-structured multilayer synaptic device is developed using an 8-inch wafer-based and complementary metal–oxide–semiconductor (CMOS) fabrication process. The three types of MIM-structured synaptic devices are compared to assess their effects on reducing the operating power. The obtained results exhibited low-power operation owing to the inserted layers acting as an internal resistor. The modulated operational conductance level and simple MIM structure demonstrate the feasibility of implementing both low-power operation and high-density integration in multilayer synaptic devices.

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Section: Introductionmentioning

confidence: 99%

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Kim,

Han,

Cho

et al. 2024

Nanomaterials

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Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

Kim,

Seo,

Cho

et al. 2023

Sci Rep

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Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices.

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Big Data Enabled Intrusion Detection with Honeypot Intelligence System on Apache Flink (BDE-IDHIS)

Mudgal,

Bhatia

2023

2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT)

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Big Data Storage and Analysis

Cited by 3 publications

References 14 publications

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

Big Data Enabled Intrusion Detection with Honeypot Intelligence System on Apache Flink (BDE-IDHIS)

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