Bilayer Graphene: From Stacking Order to Growth Mechanisms

Abstract

Due to the unique bandgap tunability of bilayer graphene, the preparation of large‐sized bilayer graphene has attracted a wide range of attention. Herein, the preparation of bilayer graphene, from stacking order to growth mechanism, is reviewed, and the chemical vapor deposition (CVD) of AB‐stacked bilayer graphene on copper substrate is emphasized. Various methods and growth strategies to synthesize bilayer graphene and the corresponding growth mechanisms are discussed. Mechanisms of layer‐by‐layer growth, the hydrogen passivation of graphene edges for the formation of bilayers, and carbon atoms penetrating through a copper wall for bilayer growth are included and highlighted for a better understanding of controlling bilayer graphene uniformity and forming its stacking order. Finally, the remaining challenges and the potential development of CVD‐controlled growth of bilayer graphene are outlined.

In Situ Investigating the Mechanism of Graphene Growth by Chemical Vapor Deposition

“…One is on-top growth (the new layer grows upper the previous layer). The other one is underlayer growth (the new layer grows between the previous layer and the substrate) . The growth mode can be distinguished via in situ observing under hydrogen etching …”

“…The other one is underlayer growth (the new layer grows between the previous layer and the substrate). 27 The growth mode can be distinguished via in situ observing under hydrogen etching. 18 Figure 1e shows the images of three-layer graphene during in situ etching at 900 °C on Pt.…”