Bilayer technology for ArF and F 2 lithography: the development of resists to minimize silicon outgassing

Barclay, George G.; Kanagasabapathy, Subbareddy; Pohlers, Gerd; Mattia, Joseph; Xiong, Kao; Ablaza, Sheri L.; Cameron, James F.; Zampini, T.; Zhang, Tao; Yamada, Shintaro; Huby, Francois; Wiley, Kenneth

doi:10.1117/12.485141

Cited by 11 publications

(8 citation statements)

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“…Four primary methods have been used to screen for resist outgassing. The earliest technique reported was collection of emitted vapors in a cold trap with subsequent flash evaporation into a gas chromatograph−mass spectrometer (GC-MS) for analysis. , This method collects all condensables and has the potential for uniquely identifying and quantifying all reaction products. It can miss any chemical classes that condense in the trap but do not re-evaporate, however.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Volatile Species Formed during Exposure of Photoresists to Ultraviolet Light

et al. 2007

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A photochemical path for formation of volatile S and acidolytic paths for formation of volatile Si and/or C during exposure to ultraviolet light have been identified for two silicon-containing bilayer photoresists using atmospheric pressure ionization mass spectrometry (API MS) and secondary ion mass spectrometry (SIMS). Si and S are of particular concern because of their potential for irreversible adsorption onto nearby optical coatings inside a lithographic tool, causing permanent detuning. We describe the analytical techniques used and report estimates for absolute numbers of Si and S atoms lost from the resists. The data show that Si bound through oxygen is easily cleaved from the polymer by photogenerated acid while Si bound through carbon is not. Photodissociation of perfluorosulfonic acid from the photoacid generators results in significant loss of S. The data are compared to previous studies, and the advantages and limitations of these techniques for photoresist chemistry characterization are discussed.

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Section: Introductionmentioning

confidence: 99%

“…Typically GC-MS studies use a single column to separate various species in a mixture formed from all types of resists . This works well for certain cases; however, it has been shown that when this mixture contains, for example, hydrocarbons and siloxanes, multiple columns are required to cleanly separate all products …”

Section: Introductionmentioning

confidence: 99%

Characterization of Volatile Species Formed during Exposure of Photoresists to Ultraviolet Light

et al. 2007

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“…[7][8] Siloxane polymers are also candidate 157-nm resist materials, and silsesquioxane-based resists for 157-nm lithography have been developed. [10][11][12][13] Although silsesquioxane is less transparent to 157-nm light than fluoropolymers, it gives a high etch selectivity when used as the top layer in a bilayer resist process. We have already used a fluorine-containing silsesquioxane-type resist (F-SSQ) in a 157-nm bilayer resist process to fabricate a 60-nm 1:1 WSi(50 nm)/polySi(50 nm) gate [7][8] and to make an 85-nm 1:4 contact hole (C/H) pattern in 400-nm-thick tetraethyl orthosilicate (TEOS).…”

Section: Introductionmentioning

confidence: 99%

Advances in resist pattern transfer process using 157-nm lithography

Furukawa¹,

Hagiwara²,

Kawaguchi³

et al. 2004

SPIE Proceedings

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The bilayer process we developed for 157-nm lithography uses a fluorine-containing silsesquioxane-type resist (F-SSQ). Gate fabrication is done by using a F-SSQ(90 nm)/organic film(200 nm)/poly-Si(150 nm)/SiO 2 (10 nm)/Si structure. The organic film works well as an anti-reflecting layer. Using a microstepper with a numerical aperture of 0.90 and optimizing the resist thickness, we made a 50-nm 1:1 line-and-space (L/S) pattern by using an alternative phase-shifting mask and made a 45-nm SRAM by using a chromeless phase lithography mask. Neither resist pattern footing nor undercutting was observed on the organic film. The reactive ion etching (RIE) selectivity between the F-SSQ and the organic film was sufficient (about 7), the resist pattern was transferred to the underlayer, and both 50-nm 1:1 L/S and 45-nm SRAM gate patterns were made using the organic film as an etching mask. Contact hole (C/H) fabrication is done by using a F-SSQ(105 nm)/organic film(400 nm)/tetraethyl orthosilicate (TEOS)-SiO 2 (1200 nm)/Si structure, and we made a 75-nm 1:1 C/H pattern by using the microstepper with a binary mask. The RIE selectivity was sufficient (about 15) for making high-aspect-ratio contact holes, and we made a 75-nm 1:1 C/H pattern in 1200-nmthick TEOS. This bilayer process is thus promising for making 65-nm-node semiconductor devices.

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“…Various materials have been reported to have been used as bilayer imaging resists, including polyacrylates, cyclic olefin-co-maleic anhydride polymers, vinyl ether-maleic anhydride copolymers and, of course, the silsesquioxane-based resins. [5][6][7][8][9][10][11][12][13][14][15][16] The latter can include such variations as hydrogen or methyl silsesquioxane (HSQ and MSQ), or even polyhedral oligomeric silsesquioxane (POSS).…”

Section: Introductionmentioning

confidence: 99%

A modified bilayer resist approach for 45 nm flash lithography

Osborn¹,

Quinto²,

Cheung³

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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Advancing technology nodes in semiconductor manufacturing require more demanding lithographic performance for patterning. The advent of 45 nm development necessitated dual damascene lithography moving from a KrF-based bilayer approach to one that includes an ArF photoresist for higher resolution. There are multiple methods for an ArF dual damascene (via first, trench last) system, including bilayer, trilayer and hard mask approaches. Flash manufacturing demands are sensitive to process cost of ownership, so more complex approaches such as trilayer and hard mask film stacks were not as attractive. One method examined as an ArF dual damascene solution was a so-called "modified bilayer" approach, which is a combination of both KrF and ArF resist materials; in particular, this film stack allows for the use of ArF silicon-containing resists along with a variety of anti-reflective and gap fill underlayer materials. The modified bilayer approach afforded many advantages, including chemical compatibility, etch performance and process robustness. The modified bilayer approach represents a culmination of learning that has enabled 45 nm back end of the line (BEOL) dual damascene processing with ArF silicon-containing photoresists.

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Bilayer technology for ArF and F 2 lithography: the development of resists to minimize silicon outgassing

Cited by 11 publications

References 0 publications

Characterization of Volatile Species Formed during Exposure of Photoresists to Ultraviolet Light

Characterization of Volatile Species Formed during Exposure of Photoresists to Ultraviolet Light

Advances in resist pattern transfer process using 157-nm lithography

A modified bilayer resist approach for 45 nm flash lithography

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