2009
DOI: 10.1016/j.physe.2009.02.003
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Binding energy of donor impurities in double inverse parabolic quantum well under electric field

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Cited by 15 publications
(5 citation statements)
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“…[20][21][22][23] Under these external effects, it is possible to find many studies in which binding energy (E b ) and self-polarization (SP/e) calculations are made for the confinement electron, especially in QW1-doped semiconductors. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Recently, the SP/e, which is defined as the influence of the well potential on the impurity atom has been studied for QW1 as a function of well width, external electric field, and the impurity position. In our previous studies, we have studied SP/e in QW1 under the laser field.…”
Section: Introductionmentioning
confidence: 99%
“…[20][21][22][23] Under these external effects, it is possible to find many studies in which binding energy (E b ) and self-polarization (SP/e) calculations are made for the confinement electron, especially in QW1-doped semiconductors. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Recently, the SP/e, which is defined as the influence of the well potential on the impurity atom has been studied for QW1 as a function of well width, external electric field, and the impurity position. In our previous studies, we have studied SP/e in QW1 under the laser field.…”
Section: Introductionmentioning
confidence: 99%
“…double inverse parabolic quantum well [24]. They indicated that by changing the Al concentrations in the center of the wells, the electric field and the geometric parameters of the well, absorption peak position could be tuning.…”
Section: Kasapoglu Et Al Investigated the Effects Of The Geometrical ...mentioning
confidence: 99%
“…In recent decades, multiple quantum wells have been investigated due to their potential applications (e.g., photo-detectors, high-speed absorption modulators, electro optical switches, and terahertz oscillators) [24]. Technological applications of multiple quantum wells depend on their optical and transportation properties that related to the quantum well specification [25].…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18][19][20] Also, impurities play an important role in understanding the optical and electronic properties of such structures. [21][22][23][24] In addition, extensive theoretical and experimental research has been published on the optical and electronic properties, excitons, and impurity levels in QDs. [25][26][27][28][29][30][31] Moreover, the effects of external influences such as applied electric and magnetic fields, temperature, pressure, strain, and laser on the physical properties of low-dimensional systems have greatly contributed to understanding the fascinating new phenomenon and creating new devices or improving the performance of existing ones.…”
Section: Introductionmentioning
confidence: 99%