Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

Abstract

Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first few excited state binding energies of a donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. We discuss detailedly dependence of the binding energies on the impurity positions. The results show that the binding energy is the largest when the impurity is located at the center of RQD with zero field and is lowest when the impurity is located at the corner of the RQD. The peak strengths and positions of the probability density in RQD appear to be the critical control on such impurity-induced dependence. We believe our results can provide an indication for design of some photoelectric devices constructed based on GaAs RQD structures.