Binding energy of excitons in inhomogeneous quantum dots under uniform electric field

Khamkhami, J. El; Feddi, E.; Assaid, E.; Dujardin, F.; Stébé, B.; Diouri, J.

doi:10.1016/s1386-9477(02)00448-4

Cited by 27 publications

(9 citation statements)

References 17 publications

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“…The results are in agreement with those in Ref. [38]. Figure 6(a) shows the variations of the radiative lifetime of Al x Ga 1−x N/GaN inverted core/shell QD with QD size.…”

Section: Resultssupporting

confidence: 91%

Optical properties of core/shell spherical quantum dots*

Shi

Yan

2020

Chinese Phys. B

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In this study, the effects of quantum dot size on the binding energy, radiative lifetime, and optical absorption coefficient of exciton state in both GaN/Al x Ga1−x N core/shell and Al x Ga1−x N/GaN inverted core/shell quantum dot structures are studied. For the GaN/Al x Ga1−x N core/shell structure, the variation trend of binding energy is the same as that of radiation lifetime, both of which increase first and then decrease with the increase of core size. For Al x Ga1−x N/GaN inverted core/shell structure, the binding energy decreases first and then increases with core size increasing, and the trends of radiation lifetime varying with core size under different shell sizes are different. For both structures, when the photon energy is approximately equal to the binding energy, the peak value of the absorption coefficient appears, and there will be different peak shifts under different conditions.

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“…The results are in agreement with those in Ref. [38]. Figure 6(a) shows the variations of the radiative lifetime of Al x Ga 1−x N/GaN inverted core/shell QD with QD size.…”

Section: Resultssupporting

confidence: 91%

Optical properties of core/shell spherical quantum dots*

Shi

Yan

2020

Chinese Phys. B

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“…The change of the single exciton transition energy in response to an applied bias, i.e. the quantumconfined Stark shift, is a widely studied effect in quantum dots [117,128,[131][132][133][134][135][136]. So far, theoretical and experimental work focused solely on the effect of vertical electric fields applied along the quantum dot growth axis.…”

Section: Application: Vertical and Lateral Stark Shifts Of Excitons Imentioning

confidence: 99%

Advances in the theory of electronic structure of semiconductors

Majewski

Birner

Trellakis

et al. 2004

phys. stat. sol. (c)

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PACS 71. 71.15.Mb, 71.20.Nr, This paper reviews the present status of recently developed ab-initio as well as semiempirical electronic structure methods that are particularly suited for semiconductors and mesoscopic semiconductor structures. In assessing each method, we provide some additional and hitherto unpublished details about its implementation. In the first part of the paper, we discuss two important extensions of the local density functional theory, the screened-exchange and the exact exchange method namely. We proceed with a discussion of the relativistic local density method that is essential for a prediction of spin-related phenomena in semiconductors. Finally, we review a rather complete and extensve implementation of the envelope function approach for arbitrary three-dimensional nanometer device structures.

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“…In our previous study, we discussed the shortcomings of this model. Indeed, the model adopted by Ferreyra and Proetto gives results close to those from the model of a correlated pair confined in an infinitely deep potential only for the strong-confinement regime [17,18]. A fourth study was performed by Kai Chang [19].…”

Section: Introductionmentioning

confidence: 86%

Excitons in InP/InAs inhomogeneous quantum dots

Assaid¹,

Feddi²,

Khamkhami³

et al. 2002

J. Phys.: Condens. Matter

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Wannier excitons confined in an InP/InAs inhomogeneous quantum dot (IQD) have been studied theoretically in the framework of the effective mass approximation. A finite-depth potential well has been used to describe the effect of the quantum confinement in the InAs layer. The exciton binding energy has been determined using the Ritz variational method. The spatial correlation between the electron and the hole has been taken into account in the expression for the wavefunction. It has been shown that for a fixed size b of the IQD, the exciton binding energy depends strongly on the core radius a. Moreover, it became apparent that there are two critical values of the core radius, acrit and a2D, for which important changes of the exciton binding occur. The former critical value, acrit, corresponds to a minimum of the exciton binding energy and may be used to distinguish between tridimensional confinement and bidimensional confinement. The latter critical value, a2D, corresponds to a maximum of the exciton binding energy and to the most pronounced bidimensional character of the exciton.

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Binding energy of excitons in inhomogeneous quantum dots under uniform electric field

Cited by 27 publications

References 17 publications

Optical properties of core/shell spherical quantum dots*

Optical properties of core/shell spherical quantum dots*

Advances in the theory of electronic structure of semiconductors

Excitons in InP/InAs inhomogeneous quantum dots

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