Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Moscoso-Moreno, C. A.; Franco, R.; Silva–Valencia, J.

doi:10.1002/pssb.200880524

Cited by 24 publications

(5 citation statements)

References 24 publications

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“…It shows that the excitonic binding energy increases nearly linearly with increasing pressure. This is in agreement with the results reported by some authors [22][23][24]. It is explained that the relative distance between the electron and hole is decreased and therefore the Coulomb interaction is increased when the QD size is reduced as the pressure increases.…”

Section: Introductionsupporting

confidence: 93%

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Shi

Yan

2010

Phys. Status Solidi (c)

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A variational method is used to discuss the binding energies of excitons in a strained wurtzite cylindrical quantum dot by considering the hydrostatic pressure effect. Besides the built‐in electric field due to the spontaneous and piezoelectric polarizations, the strain dependence of parameters is also considered in our calculation. The results indicate that the binding energies of excitons with strain effect are higher than that without strain effect when the quantum dot height is small, but the binding energy with strain effect becomes lower than that without strain effect as the quantum dot height increases. The contribution from the built‐in electric field to the strain effect is dominant, but the contribution from the strain dependence of parameters is quite small (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 93%

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Shi

Yan

2010

Phys. Status Solidi (c)

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“…where η is the Al mole fraction and E g (η, P) is the difference in the band gap energy of GaAs and Ga 1−η Al η As at the point as a function of pressure P. The pressure dependence of E g (η, P) can be expressed by , Jayam and Navaneethakrishnan (2003), Moscoso-Moreno et al (2007), and Elabsy (1993) …”

Section: Pressurementioning

confidence: 99%

Study of optical properties in a cubic quantum dot

et al. 2011

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In this paper, the effect of hydrostatic pressure on both the intersubband optical absorption coefficients and the refractive index changes is studied for typical GaAs/Al x Ga 1−x As cubic quantum dot. We use analytical expressions for the linear and third-order nonlinear intersubband absorption coefficients and refractive index changes obtained by the compactdensity matrix formalism. The linear, third-order nonlinear, and total intersubband absorption coefficients and refractive index changes are calculated at different pressures as a function of the photon energy with known values of box length (L), the incident optical intensity (I ), and Al concentration (x). According to the results obtained from the present work, we have found that the pressure plays an important role in the intersubband optical absorption coefficient and refractive index changes in a cubic quantum dot.

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“…On the base of these applications is the large dependence of exciton binding energy on different and adjustable parameters: the radius of the dot, the effective masses ratio of the carriers, the height and the shape of the confining potential caused by the matrix material in which the exciton is embedded [1][2][3][4][5]. Various external actions such as magnetic field [6], electric field [7,8] and hydrostatic pressure [9] were also considered and provide interesting properties. Recently, some works were interested to combined of intense terahertz (THz) laser effects and applied electric field on binding energy of exciton.…”

Section: Introductionmentioning

confidence: 99%

Combined Effects of Intense THz Laser Field and Applied Electric Field on Binding Energy of Exciton in GaAs/GaAlAs Finite Spherical Quantum Dot

J. Diouri,

A.Ouadgui,

J. Khamkhami

et al. 2023

J. Nanosci. Tech.

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This paper describes the combined effects of intense THz laser field and electric field on the ground state binding energy of heavy hole excitons confined in GaAs/ GaAlAs spherical finite quantum dots. The formulation is based on the model of “laser dressed potential” which combines Coulomb interaction and field effect in only one potential as reported in the literature. The calculation is performed by using the variational method in the framework of the single band effective mass theory. Our results show that (i) the laser field increases the electron and hole confinement energy that form the exciton in the QD until they reach a maximum, then they become almost constant for an intense laser field, (ii)the electric field and the laser field lowers the binding energy for all quantum dot radii making the exciton stabilized and clustered near the center of the dot, and iii)the laser field increases the spatial extension of exciton but the electric field decreases it linearly.

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Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Cited by 24 publications

References 24 publications

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Study of optical properties in a cubic quantum dot

Combined Effects of Intense THz Laser Field and Applied Electric Field on Binding Energy of Exciton in GaAs/GaAlAs Finite Spherical Quantum Dot

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