Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs

Poghosyan, Benyamin; Demirjian, G.H.

doi:10.1016/j.physb.2003.08.020

Cited by 16 publications

(7 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar results have been obtained for the binding energy of an impurity ion in infinite QWW made of InSb for the wire radii narrower than 30 Å using the relativistic treatment [6], supported by the results for the finite InSb/ GaAs well wires [7]. However, the characteristic limit of Compton wavelength for the electron distance from the Coulomb attraction centre in the semiconductor structure considered is determined in parallel to Ref.…”

Section: Introductionsupporting

confidence: 82%

Binding energy of relativistic hydrogenic impurities in cylindrical quantum well wires under an applied electric field

Mese¹,

Okan²

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

PACS 71.55. Eq, 73.21.Hb The ground state binding energy of a hydrogenic impurity in infinite cylindrical GaAs quantum well wires subjected to an external electric field applied perpendicular to the symmetry axis of the wire is studied within the relativistic approach. A rapid decrease of the binding energy for different intensities of the electric field with increasing wire radius is predicted. Furthermore, the relativistic effects are emphasised by comparing them with the non-relativistic results.

show abstract

Section: Introductionsupporting

confidence: 82%

Binding energy of relativistic hydrogenic impurities in cylindrical quantum well wires under an applied electric field

Mese¹,

Okan²

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The situation is radically changed when the effective mass of the impurity center (hole) is comparable to the mass of the electron. For example, in the narrow-gap semiconductors for which the CC standard (parabolic) dispersion law is violated, the effective masses of the electron and light hole are equal [11][12][13], and obviously, Born-Oppenheimer approximation is not further applicable.…”

Section: Introductionmentioning

confidence: 99%

Spontaneous Exciton Collapse in a Strongly Flattened Ellipsoidal InSb Quantum Dot

Dvoyan

Karoui²,

Vlahović³

2022

Nanoscale Res Lett

View full text Add to dashboard Cite

Electronic and excitonic states in an InSb strongly flattened ellipsoidal quantum dot (QD) with complicated dispersion law are theoretically investigated within the framework of the geometric adiabatic approximation in the strong, intermediate, and weak quantum confinement regimes. For the lower levels of the spectrum, the square root dependence of energy on QD sizes is revealed in the case of Kane’s dispersion law. The obtained results are compared to the case of a parabolic (standard) dispersion law of charge carriers. The possibility of the accidental exciton instability is revealed for the intermediate quantum confinement regime. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb-like sub-levels. It is revealed that in the case of the Kane dispersion law, the Coulomb levels shift into the depth of the forbidden band gap, moving away from the quantum confined level, whereas in the case of the parabolic dispersion law, the opposite picture is observed. The corresponding selection rules of quantum transitions for the interband absorption of light are obtained. New selection rules of quantum transitions between levels conditioned by 2D exciton center of mass vertical motion quantization in a QD are revealed. The absorption threshold behavior characteristics depending on the QDs geometrical sizes are also revealed.

show abstract

“…The binding energy of a hydrogen-like impurity in a thin size-quantized wire of InSb/GaAs semiconductors [ 27 ] with Kane’s dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper this analogy is applied for the investigation of binding energy of hydrogenlike shallow donor in a thin size-quantized wire of the InSb/GaAs semiconductors in a magnetic field, parallel to the wire axis. Calculations have been performed using the variational approach, developed in [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

Poghosyan

2007

Nanoscale Res Lett

View full text Add to dashboard Cite

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth ofB.

show abstract

Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs

Cited by 16 publications

References 16 publications

Binding energy of relativistic hydrogenic impurities in cylindrical quantum well wires under an applied electric field

Binding energy of relativistic hydrogenic impurities in cylindrical quantum well wires under an applied electric field

Spontaneous Exciton Collapse in a Strongly Flattened Ellipsoidal InSb Quantum Dot

Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

Contact Info

Product

Resources

About