Binding energy, polarizability, and diamagnetic response of shallow donor impurity in zinc blende GaN quantum dots

Iqraoun, E.; Sali, A.; El-Bakkari, K.; Duque, C.A.

doi:10.1016/j.spmi.2021.107142

Cited by 18 publications

(10 citation statements)

References 51 publications

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“…On the other hand, the binding energy of impurity in the weak confinement regime simply fluctuates with the strength of the electric field and is relatively unaffected by the quantum size effect. These results are in good agreement with that presented in the case of conical shaped QD [19]. , for three values of applied electric field intensity (F=20kV/cm, 40kV/cm et 60kV/cm).…”

Section: Numerical Results and Discussionsupporting

confidence: 91%

“…They found that the electric field's direction significantly affects the off-center impurity's binding energy. Taking into account physical characteristics such as the built-in dipole moment, magneto-optical, adjustment of electronic correlation caused by the electric field, and single particle decomposition, a systematic and in-depth study of excitonic states in In(Ga)As, In(Ga)As/GaAs, and GaAs/AlGaAs have been reported in the references [15][16][17][18][19]. The calculations, which were conducted within a fundamental theoretical framework, produced excellent agreement with the experimental findings and showed how essential it is to properly account for the Coulomb's interaction between charge carriers when trying to understand the physics of confined excitonic complexes in low-dimensional systems.…”

Section: Introductionmentioning

confidence: 99%

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Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Chnafi,

Mommadi,

Boussetta

et al. 2023

SSP

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In this study, we have examined, under the influence of an electric field applied along the z-direction, the binding energy Stark-shift, the dipole moment and the polarizability of a confined shallow donor impurity in GaAs conical-shaped quantum dots (CSQD). With square infinite confinement system, the calculations are based on the approximation of the effective mass by using the finite difference method. Our results show that increasing the radius of the CSQD structure and the electric field intensity increases the Stark shift binding energy and it has a mixed behavior as a function of the impurity position. Furthermore, the polarizability and the dipole moment vary in a quasi-linear way as a function of the dot radius and they follow a decreasing function as a function of the electric field intensity. These two physical parameters have a double behavior, they decrease with the position of the impurity in the strong confinement regime and they increase in the top regions of the quantum dot. These results provide a lot of information about the behavior of the electronic wave function which give more interesting ideas for the fabrication of optoelectronic devices.

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Section: Numerical Results and Discussionsupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Chnafi,

Mommadi,

Boussetta

et al. 2023

SSP

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show abstract

“…We observe from the figure that when the w is near to E fi the linear RI has a negative slope, while in this region the third-order nonlinear RI is positive, which is consistent with the Eqs. given by (10) and (11). As a consequence, the Dn n r / has lesser values than ( )…”

Section: Resultsmentioning

confidence: 97%

“…The reader is invited to examine the book [1] for a more detailed discussion of such properties in the QRs. Furthermore, theoretical studies of the problem of the presence of the impurity or the external fields in quantum rings and quantum dots (QDs) show the possibility of controlling the optical and electronic properties in these systems [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The combined effect of the magnetic and electric fields on the impurity confined in InAs QRs has been investigated in [2].…”

Section: Introductionmentioning

confidence: 99%

Magnetic field effect on the linear and nonlinear refractive index and optical absorption of a donor in a GaAs quantum ring

El-Bakkari¹,

Iqraoun

Jaouane³

et al. 2023

Phys. Scr.

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The effects of the magnetic field (γ), the radial position of impurity and the degree of confinement on the oscillator strength (OS), refractive index (Δn⁄n_r ) and optical absorption (α) of an impurity inside a GaAs quantum ring (QR) are explored using the effective mass approximation and variational method. It is shown that the peak position of the optical absorption and the refractive index decrease and move toward the lower incident photon energy as the strength of the γ increases. In addition, it is found that the strongest α relates to the case when the impurity is positioned at the right side of QR in the presence of the magnetic field. Our examinations also show that the oscillator strength decreases as the γ increases especially for an on-center donor impurity.

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“…Many researchers have studied the effect of the position of the impurity on physical parameters such binding energy, dipole moment, donor energy and diamagnetic susceptibility. Their common results on a symmetric behavior when the impurity moves on a symmetric geometry, on the other hand a non-symmetric behavior when the symmetry of the geometry is broken [25][26][27][28][29]. The finite difference method (FDM) has been applied to a large study, due to its simplicity and high accuracy [29][30][31].…”

Section: Introductionmentioning

confidence: 99%

The Effect of a Single Off-Center Shallow Donor Atom on the Binding Energy and Diamagnetic Susceptibility in a GaAs Horn Torus Quantum Dot

Boussetta,

Mommadi,

Chouef

et al. 2023

SSP

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In this work, we have studied an electron confined in a GaAs Horn torus quantum dot in the presence of a shallow donor impurity. Using the effective mass approximation and by considering an infinite confinement potential, the Schrödinger equation was calculated by the finite difference method. The electron-impurity binding energy and the diamagnetic susceptibility are studied for different geometric sizes of the Horn torus. In addition, the effect of the radial and angular positions of the shallow donor impurity on the binding energy and the diamagnetic susceptibility are examined. The results show that the binding energy is much higher at small sizes of the nano system. Also, the diamagnetic susceptibility exhibits a symmetric behavior as a function of the angular position of the shallow impurity donor unlike that when the impurity moves radially. The influences of these parameter variants help us to better understand the effects of the size of the quantum dot and the position of the donor impurity, which improve the sensitive of the opto-electronic devices.

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Binding energy, polarizability, and diamagnetic response of shallow donor impurity in zinc blende GaN quantum dots

Cited by 18 publications

References 51 publications

Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Binding Energy Stark-Shift, Polarizability and Dipole Moment Response of Shallow Donor Impurity in GaAs Quantum Dots

Magnetic field effect on the linear and nonlinear refractive index and optical absorption of a donor in a GaAs quantum ring

The Effect of a Single Off-Center Shallow Donor Atom on the Binding Energy and Diamagnetic Susceptibility in a GaAs Horn Torus Quantum Dot

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