Five Au(III) compounds were synthesized and evaluated for atomic layer deposition of Au thin films. One of the compounds, Me 2 Au(S 2 CNEt 2 ), showed optimal thermal characteristics while being volatile and thermally stable. In the growth experiments, this compound was applied with O 3 at temperatures of 120−250 °C. Self-limiting growth was confirmed at 180 °C with a rate of 0.9 Å/cycle. The deposited Au thin films were uniform, polycrystalline, continuous, and conductive. Typical resistivity values of 40 nm thick films were 4−16 μΩ cm, which are low for chemically deposited thin films. The chemical composition of a Au thin film deposited at 180 °C was analyzed by time-of-flight elastic recoil detection analysis, proving the film was pure with small amounts of impurities. The detected impurities were O (2.9 atom %), H (0.9 atom %), C (0.2 atom %), and N (0.2 atom %).