Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO₃thin films with different compliance currents

Abstract

The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol-gel method to form a metal-insulator-metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films.

TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

“…In this short review, we shall cover the material properties, elucidated mechanisms and current models in order to explain the state of these fastmoving fields. ReRAM is usually based on transition metal oxides such as TiO 2 , SrTiO 3 [2,3], NiO [4], CuO [5], ZnO [6], MnO x [7], HfO x [8], Ta 2 O 5 [9], Ti 2 O 5−x /TiO y [10], TaO x /TiO 2−x [11]; both binary and perovskite oxides are capable of resistance switching. Memristors can be made out of TiO 2 , chalcogenides [12], polymers [13,14], atomic switches [15], spintronic systems [16] and quantum systems [17].…”

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

“…[28]. This is due to fact that the different physical mechanisms such as ionic [29], electrochemical [30], Joule heating [31], raising and lowering Schottky barriers [32] etc are getting associated with the memristor device. The detailed discussion of various conduction mechanisms can be found in [20,33,34].…”

Overview of emerging memristor families from resistive memristor to spintronic memristor

“…In addition to the thermochemical effect and the ionic effect, other possible mechanisms that include metalsemiconductor transition [29,40], crystalline TiO 2 -amorphous TiO 2 phase transition via conduction heating and breaking [29,41], raising and lowering Schottky barriers via bulk or interface transport of the oxygen [29,42], and conductance heating causing lateral transport of conducting filaments [29,43], have also been proposed to account for the resistance switching of the resistive memristor. The presence of various switching mechanisms is possibly due to the fact that the resistive materials were fabricated and measured differently among the aforementioned literatures.…”