Bipolar Carrier (e −/h +) Layer on Clean Surface of Insulating BaTiO3 Crystal Intrinsic to Ferroelectrics

Watanabe, Yoshihisa; Matsumoto, Daisuke; Urakami, Yosuke; Arai, T.; Masuda, Akihiro; Cheong, S.-W.

doi:10.1080/00150190802365640

Cited by 13 publications

(15 citation statements)

References 47 publications

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“…22 for a one-dimensional domain structure in an isotropic ferrolectric with variable polarization which can be straightforwardly generalized to our case of a hard anisotropic ferroelectric. The energy density with ac-count of screening charges of semiconductor nature reads (16) where the energy density of the electric field E is…”

Section: Energy Of a Domain Structure In A Semiconducting Ferroelementioning

confidence: 99%

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Genenko

Hirsch

Erhart

2014

Journal of Applied Physics

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Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO 3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V. V C 2014 AIP Publishing LLC. [http://dx

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Section: Energy Of a Domain Structure In A Semiconducting Ferroelementioning

confidence: 99%

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Genenko

Hirsch

Erhart

2014

Journal of Applied Physics

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“…[9], although it was include in refs. [10,24]. This is because many trap cites were expected also in ideal hetero-interfaces, and in fact the theory neglecting the kinetic energy agreed better with experiments than the theories including the kinetic energy.…”

Section: Intrinsic Free Electrons/holes At Free Surfacementioning

confidence: 63%

“…2 [10, 23,24]. The thickness of the electron/hole layer is a few nanomenter, which means that this layer can only be measured when the surface is clean such as in ultrahigh vacuum.…”

Section: Intrinsic Free Electrons/holes At Free Surfacementioning

confidence: 99%

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Examination of Long-Range Electrostatic Interaction for Ferroelectricity in View of Intrinsic Free Electrons/Holes at Polarization Discontinuities

Watanabe

2012

Ferroelectrics

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“…This instability is apparently resolved by inappropriate use of large permittivity as in Eq. (1), which would mean the necessity of intrinsic electrostatic screening due to free charges [13][14][15].…”

Section: Discussionmentioning

confidence: 99%

Appropriate Value of Permittivity for Depolarization Field and Universal Instability of Insulating Ferroelectric Phase in Single-Domain State

Watanabe

2010

Ferroelectrics

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We redefine the permittivity for the depolarization field and show that in most situations the permittivity for depolarization field should be unity, and show a proper expression for depolarization field. Based on this expression a generic consideration of ferroelectrics undergoing the first order transition shows that free standing two-dimensional ferroelectric phase cannot exist in a single domain state without a non-dielectric screening mechanism.

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Bipolar Carrier (e ⁻/h ⁺) Layer on Clean Surface of Insulating BaTiO₃ Crystal Intrinsic to Ferroelectrics

Cited by 13 publications

References 47 publications

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields

Examination of Long-Range Electrostatic Interaction for Ferroelectricity in View of Intrinsic Free Electrons/Holes at Polarization Discontinuities

Appropriate Value of Permittivity for Depolarization Field and Universal Instability of Insulating Ferroelectric Phase in Single-Domain State

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