Bipolar magnetotransistor sensors. An invited review

Roumenin, Chavdar

doi:10.1016/0924-4247(90)80014-v

Cited by 54 publications

(13 citation statements)

References 48 publications

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“…In addition, the nonlinearity error (NLE) is defined as (2) where is the measured value of the induced output Hall voltage and is the calculated value based on the slope of the straight line obtained by best fitting to the output characteristic [2]. Figs.…”

Section: Operating Principlesmentioning

confidence: 99%

“…M ANY physical analyzes and optimized geometric designs of magnetoresistors (MRs), magnetotransistors (MTs), carrier-domain magnetometers (CDMs), and magnetodiodes (MDs) have been proposed [1], [2]. Of these, the MT is the most sensitive device because its collector current varies exponentially with the base current which varies with the supplied magnetic induction.…”

Section: Introductionmentioning

confidence: 99%

“…Of these, the MT is the most sensitive device because its collector current varies exponentially with the base current which varies with the supplied magnetic induction. The MR is highly linear because the induced Hall voltage is approximately proportional to the supply bias current [2]. A more sensitive magnetic device can be possibly generated by the interaction of the semiconductor bulk and a magnetic field [3].…”

Section: Introductionmentioning

confidence: 99%

“…The words "vertical" and "bulk" refer to the direction of flow of the carriers. If the current moves perpendicular to a chip's surface, it is defined as vertical, and if the substrate itself is an active region, it is called bulk [2], [4]- [8].…”

Section: Introductionmentioning

confidence: 99%

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Interaction Between Magnetoresistor and Magnetotransistor in the Longitudinal and Folded Vertical Hall Devices

Sung

2004

IEEE Sensors J.

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This study investigates the one-dimensional longitudinal and folded vertical Hall devices, fabricated in a standard 0.35-m CMOS process. The smallest nonlinearity error 0.18%, the minimum offset 0.29 mV, and the maximum supply-current-related sensitivity RI = 3 837 V A T, are obtained with a 10-mA bias current excited by the supply voltage of 0.6 V. The main magnetic mechanism is that the filament current of the vertical magnetoresistor is directly injected into the base region of the bulk magnetotransistor (BMT) to increase the density of minority carriers and then enhance the magnetosensitivity. Furthermore, the induced Hall voltage of the longitudinal vertical Hall device is proportional to the bias current, but the folded vertical Hall device is inversely impacted. This advantage makes it possible to get a low-power folded vertical Hall device. The folded style not only reduces the nonlinearity error but also minimizes the offset. Unfortunately, the tradeoff is a fall in sensitivity. The BMT is applied to increase magnetic sensitivity and to compensate for this negative impact. Index Terms-Folded vertical Hall device, Hall effect, magnetoresistor (MR), magnetosensor, magnetotransistor (MT).

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Section: Operating Principlesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Interaction Between Magnetoresistor and Magnetotransistor in the Longitudinal and Folded Vertical Hall Devices

Sung

2004

IEEE Sensors J.

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“…Although this is most commonly implemented as a Hall-effect sensor or a magnetoresistor, bipolar magnetotransistors (BMTs) have emerged as a potential alternative [2]. BMTs can offer high sensitivity, can discriminate between different directions of applied magnetic field, and can be integrated with complementary metaloxide-semiconductor (CMOS) peripheral circuits and with metal-oxide-semiconductor (MOS) field-effect power transistors on a common substrate.…”

Section: Introductionmentioning

confidence: 99%

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

Tikhonov

2005

Russ Microelectron

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For the base-in-well bipolar magnetotransistor, a computer simulation is conducted in conjunction with an experiment. The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field. (ii) The device shows threshold behavior. (iii) The relative magnetic-field sensitivity of collector current is dependent on the applied magnetic flux density; moreover, the former grows in magnitude with decreasing flux density if this is sufficiently low. (iv) The relative sensitivity changes sign as the base bias is varied. A maximum relative sensitivity of about 2000 T -1 is achieved in measurements of the earth's magnetic field.

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Magnetoresistance Amplification Effect in Silicon Transistor Device

Wang

Yang

et al. 2016

Adv Elect Materials

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Large magnetoresistance discovered in nonmagnetic semiconductors offers an alternative route to renew magnetoelectronics without ferromagnets. However, it is still a great challenge to retain such large magnetoresistance under low magnetic fields. In this work, analogous to current amplification in the transistor, a magnetoresistance amplification effect is proposed in silicon transistor device, where the device current is significantly controlled by magnetic‐field‐manipulated coupling of two p–n junctions in transistor. As a direct consequence, large magnetoresistance of 50 000% with high sensitivity of 50% Oe‐1 is yielded at magnetic field of only 0.1 T. The results not only provide here a new proposal compatible with current semiconductor technology to achieve large magntoresistance at low magnetic field, but also realize magnetic‐field‐manipulated transistor, which is a step for magnetoelectronics.

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Bipolar magnetotransistor sensors. An invited review

Cited by 54 publications

References 48 publications

Interaction Between Magnetoresistor and Magnetotransistor in the Longitudinal and Folded Vertical Hall Devices

Interaction Between Magnetoresistor and Magnetotransistor in the Longitudinal and Folded Vertical Hall Devices

Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

Magnetoresistance Amplification Effect in Silicon Transistor Device

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