Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

Hsieh, Wei Kang; Lam, Kin-Tak; Chang, Shoou Jinn

doi:10.1016/j.mssp.2015.02.073

Cited by 32 publications

(16 citation statements)

References 9 publications

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“…Hence, the existence of Schottky emission can be ascertained by fitting to two functions, which are: (i) ln(J/T 2 ) ∝ 1/T under fixed electric field; and (ii) ln(J) ∝ E 1/2 under fixed temperature. There are numerous published resistive switching devices that suggested Schottky emission as the dominant conduction mechanism, such as [33][34][35][36][37][38][39][40][41][42], etc. The combination of electrodes and materials of these works is listed in Table 3.…”

Section: Schottky Emissionmentioning

confidence: 99%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Schottky Emissionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…Therefore, set and reset voltages in ECM are lower than that in VCM. Nevertheless, it is reported that a high electronegativity of Au may also behave as active metals [ 108 ]; in addition, the omission of Ni or Ag atoms diffusion in CF formation is also reported [ 166 , 167 ]; this phenomena may relate to different ZnO film quality, device geometry, and operation method. The major device parameters as a function of different metal electrodes are summarized in Table 1 .…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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“…Park et al [ 19 ] demonstrated more reliable and reproducible RS operation observed in Pt/TiO x /ZnO/Pt memory cells than that noted in Pt/ZnO/Pt memory cells. Hsieh et al [ 20 ] described that Ni/ZnO/HfO 2 /Ni devices exhibited bipolar resistive switching behavior with multilevel characteristics during the RESET process. All such improved RS characteristics motivated deep investigations of bilayer either as ZnO/CeO 2 or as CeO 2 /ZnO heterostructures, since no study on these stacks and the influence of forming polarity on their RS characteristics and their memory performance has yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

et al. 2018

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Memory devices with bilayer CeO2−x/ZnO and ZnO/CeO2−x heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO2−x/ZnO and ZnO/CeO2−x heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 102), and ON/OFF ratio. A device with CeO2−x/ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies.

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Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias

Cited by 32 publications

References 9 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

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