Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiO<sub>x</sub>Memory Device

Chang, Yu‐Chi; Lee, Ke-Jing; Lee, Cheng-Jung; Wang, Liwen; Wang, Yeong-Her

doi:10.1109/jeds.2016.2560879

Cited by 17 publications

(13 citation statements)

References 26 publications

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“…In addition to this, interface effects, non‐uniformity in switching layer and a top electrode, different percolation paths and defects close to conductive filament are also responsible for the non‐uniformity in the HRS values . However, observed standard deviation and coefficient of variation of HRS are very small as compared to other inorganic and organic memory device reported in the literature . The better uniformity in the resistive switching leads to improved reliability and stability of the cycle to cycle and device to device operations.…”

Section: Resultsmentioning

confidence: 97%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

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Section: Resultsmentioning

confidence: 97%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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“…Figure 9 b presents the retention capability of CoG 0.5, 1, and 2 M memory devices measured at room temperature and obtained at a voltage of 0.1 V. The ON/OFF ratio of the CoG memory device (1 M) remains higher than 10 5 . The smooth roughness may facilitate stable resistive switching [ 19 , 20 ], and an improved retention capability is also achieved.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

et al. 2017

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This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

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“…In the high-voltage region of the HRS, the I – V slopes of the fitting line were approximately 2. The current density abruptly increases with I – V slopes greater than 2 when all the available traps are filled [ 6 , 7 ]. X-ray photoelectron spectroscopy (XPS) was used to analyze the TiO 2 thin films as presented in Figure 1 c. The peaks located at 529.5 and 531.1 eV were associated with lattice and non-lattice oxygen ions, respectively.…”

Section: Resultsmentioning

confidence: 99%

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

et al. 2017

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A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

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Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiO_xMemory Device

Cited by 17 publications

References 26 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

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Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOxMemory Device

Cited by 17 publications

References 26 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

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Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiO_xMemory Device