Bipolar resistive switching behaviors of ITO nanowire networks

Abstract

We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

“…These devices, that also exhibited self‐rectifying properties, exhibited bipolar resistive switching with an endurance of beyond 60 cycles, an HRS/LRS ratio of about 70 and a retention up to 10 4 s. The switching mechanism is in this case comparable to the previously discussed mechanism in single TiO 2 NWs and NW arrays . Similarly, resistive switching behavior was observed by Prakash et al in core–shell Ge/GeO x nanowires and by Li et al in ITO nanowire networks. A SEM picture of an ITO NW interwoven network grown by using a self‐assembled template of polystyrene spheres is shown in Figure a.…”

“…a) Top view SEM image of the ITO NW network after the growth process; inset shows a cross‐sectional image; b) I – V characteristic of Ag/ITO NWs network/Al stacked device that exhibits bipolar resistive switching behavior. All panels reproduced under the terms of Creative Commons Attribution 4.0 International License . Copyright 2016, the authors.…”

“…All panels reproduced under the terms of Creative Commons Attribution 4.0 International License [285]. All panels reproduced under the terms of Creative Commons Attribution 4.0 International License [285].…”

Wrinkled‐Surface‐Induced Memristive Behavior of MoS2 Wrapped GaN Nanowires

“…The fluctuation of HRS and switching voltage can be attributed to the facilitation effect of the device. [ 45 ] Because of the connection between GaN NWs and Ag NWs network, there may be more than one NW to have the conduction state in the switching process as shown in the middle graph in Figure 6d,e, while different NWs may be selected gradually to facilitate cycling leading to a more stable switching process.…”

Flexible transparent memory cell: bipolar resistive switching via indium–tin oxide nanowire networks on a poly(dimethylsiloxane) substrate

“…On the other hand, flexible transparent electronics are becoming increasingly popular, and for these devices, flexible transparent (FT) ReRAM (FT-ReRAM) is indispensable. 2,8) In our previous work, we demonstrated indium-tin-oxide (ITO) nanowire (NW) networks with bipolar RS 9) and high transmittance 10,11) (>90% in the visible range). Poly(dimethylsiloxane) (PDMS) is an optically clear, flexible, inert, non-toxic, and non-flammable material, which has been widely used in the field of micro-fluidics.…”