Bipolar Resistive Switching Characteristics of TaO<SUB>2</SUB> RRAM

Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell

“…2 In response, some types of NVMs have been investigated. [3][4][5][6][7][8][9][10][11][12][13] Accordingly, resistive random-access memory (RRAM) devices have attracted great attention. RRAM exhibit advantageous properties such as simple structure, low power consumption, high switching speed, and high integrating density.…”

Highly Stable Ultrathin TiO2Based Resistive Random Access Memory with Low Operation Voltage

“…However, with the development of integrated circuits fabrication technologies and the size scaling down of semiconductor components, traditional floating gate memories fabrication had reached their physical limitations. [1][2][3] In order to solve this topic, some NVMs such as ferroelectric random access memories (FeRAMs), [4][5][6] phase change random access memory (PCRAMs), [7][8][9][10] magnetoresistive random access memories (MRAMs), [11][12][13][14] and resistive random access memories (RRAMs) [15][16][17][18][19] have been investigated. Among these memories, RRAM device has attracted considerable attentions for its amazing characteristics, like casual device structure, low operating power consumption, high switching speed, and high integrating density, make it possible for RRAM to be the next generation NVM.…”