Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

Bipolar resistive switching on Ti/TiO2/NiCr memory cells

“…From the experiments we found that the use of Cu and Ti electrodes in the construction of TiO2-based MIM cells has some advantages over other electrodes pairs, because lower transition voltages where found than those reported previously. Transition voltages of about 2.5, -2, 4, and 2 V for the SET and -2, 2, -4, and -2 V for the RESET, have been reported for the electrodes combination Ag-ITO [14], Al-Al [19], Cu-ATO [25], and Pt-Al [26], respectively, among many others, contrasting with -1 and 1 V voltages found in our samples. In addition, an easy way of preparation is obtained by using the Ti as an electrode, since it, as well as the TiO2 thin films can be prepared in the same process, one after another.…”

“…Many models have been proposed to explain the RRAM devices such as the modification of the Schottky barrier height by trapped charge carriers [4], formation of a conductive filamentary path [5][6][7], electrical-field-induced migration of oxygen vacancies [8], carriers tunneling between crystalline defects [9], etc. Lots of the published papers demonstrate the switching properties of transition metal binary oxides [10][11][12][13][14][15], especially the TiO2 which is among the most studied [5,16,17]. Many experimental reports have been focused on the preparation of the TiO2 layer by several growth techniques, such as sputtering [13], sol-gel [18], ALD [19], etc; and study the retention time, temperature stability and endurance of MIM structures or, on the other hand, to determine the model driving the resistive switching mechanism [20,21].…”

Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

“…Among these emerging next-generation memories, Resistive Random Access Memory (ReRAM), which exhibits drastic and reversible changes in the resistance state of the metal-oxide-metal (MOM) structure with the applied voltage, is considered to offer advantages for nextgeneration nonvolatile memory devices because of its good characteristics, such as low power consumption, high switching speed, and high integration density. 1,2 For ReRAM devices, a range of materials including metal-doped perovskites, such as Cr-doped SrTiO 3 , 3 colossal magneto-resistive switching materials like Pr 0.7 Ca 0.3 MnO 3 , 4 Ag-doped GeSe, 5 and binary oxide materials, such as TiO 2 , [6][7][8] NiO, 9,10 NB 2 O 5 , 11 CuO, 12 ZrO 2 , 13 ZnO, 14 and MnO, 15 have been studied extensively. Among these ReRAM materials, TiO 2 has attracted interest because of its high resistance difference between the high resistance state (HRS) and low resistance state (LRS), simple structure, and compatibility with conventional semiconductor processes.…”