Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

Abstract

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model.

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

“…While very common in resistive switching memory oxide‐based and similar devices, bipolar switching in PCRAM has rarely been reported. There are many reasons for this, for example, the switching may not have been reproducible, might exhibit low switching speeds or relatively poor endurance or reliability .…”

“…Thus, a Ge‐rich bilayer may be more easily switchable . Also, considering an alternative concept, it is possible that it is the Sb‐Te bilayer that participates in the switching process has an excess of valence electrons comparing to the Ge‐Te layer. Therefore, the resultant structure for the RESET state based on this model would differ from the conventional case .…”

Voltammetric analysis of epinephrine using glassy carbon electrode modified with nanocomposite prepared from Co-Nd bimetallic nanoparticles, alumina nanoparticles and functionalized multiwalled carbon nanotubes

“…21–0579) nanoparticles that affirm the presence of Co-Nd nanoparticles as shown in XRD spectra of Co-Nd bimetallic nanoparticles (Fig. 3A ) (Raza et al 2016 ; Chen et al 2017 ; Ahmadi et al 2020 ). Furthermore, using the Debye–Scherer (D = kλ /β cos θ) (Bhoi et al 2020 ), its crystalline size was determined to be 2.08 nm, where D, k, λ, β and θ signify average crystalline size, constant value, X-rays wavelength, full width at half maxima and angle of diffraction respectively.…”

“…Figure 3D demonstrates the XRD pattern of prepared Co-Nd/Al 2 O 3 @fMWCNTs nanocomposite and it shows peak at 2θ value of 25.82° (002) which is the characteristic peak of fMWCNTs (Farbod et al 2011 ). Furthermore, some additional peaks at 15.56° (101), 28.28° (110) and 39.86° (311), 43.20° (222) confirm the existence of Nd (Chen et al 2017 ) (Ahmadi et al 2020 ) and Co nanoparticles (Raza et al 2016 ) in the prepared nanocomposite. Moreover, peaks at 57.42° (116), 65.29° (440) and 77.92° (110) indicate the presence of Al 2 O 3 and fMWCNTs in the fabricated Co-Nd/Al 2 O 3 @fMWCNTs nanocomposite material (Yadav et al 2019 ).…”

Use of a supercritical fluid treatment to improve switching region in resistive random access memory

“…Previous studies have shown improved switching characteristics after such an SCF treatment, including a lower set/reset voltage (V SET /V RESET ) and higher resistances at high/low resistance states (HRS/LRS). [14][15][16] Du et al demonstrated an SCF treatment for improving a Hf:SiO 2 -based RRAM with the SR in its switching layer (SL). 15) However, the effect of SCF treatment on an ITO-based RRAM has not been investigated.…”