Birefringence of GaN/AlGaN optical waveguides

Hui, Rongqing; Wan, Yueting; Li, Jilu; Jin, S. X.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.1606103

Cited by 7 publications

(6 citation statements)

References 6 publications

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“…III-nitride based waveguides (WGs) have indeed great potential in this spectral range not only because of the material transparency but also because of the low-temperature sensitivity of their index of refraction, which is one order of magnitude smaller than that of InP. Hui et al have demonstrated WG-based 2 2 directional couplers as well as 1 8 arrayed-WG gratings at m [3], [4]. Thanks to the large conduction band offset of up to 1.75 eV offered by nitride heterostructures, these materials also offer prospects for active optoelectronic devices at telecommunication wavelengths relying on intersubband (ISB) transitions Manuscript received July 10, 2007;revised September 7, 2007.…”

Section: Introductionmentioning

confidence: 99%

Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy

Lupu

Julien

Golka³

et al. 2008

IEEE Photon. Technol. Lett.

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We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-m-wide WGs the propagation losses in the 1.5to 1.58-m spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric-and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.

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Section: Introductionmentioning

confidence: 99%

Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy

Lupu

Julien

Golka³

et al. 2008

IEEE Photon. Technol. Lett.

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“…The birefringence of DFT-calculated GaN aligns well with previously reported experimental values where a value of Δn ~0.0425 by Pezzagna and co-workers was obtained, whereas Sanford and co-workers reported Δn ~0.038 47 , 55 . Hui and co-workers reported Δn ~0.04 and Shokhovets and co-workers have reported a varying birefringence, that increases with increasing photon energy and ranges between 0.037 and 0.056 46 , 56 . In this work, we obtained a birefringence for GaN that increases slowly from 0.044 to 0.051 for energies approaching the band edge.…”

Section: Methodsmentioning

confidence: 99%

Investigations of the Optical Properties of GaNAs Alloys by First-Principle

Borovac

Tan

Tansu

2017

Sci Rep

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We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN1−xAsx alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.

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“…7 the birefringence of dilute-P GaNP alloys as a function of photon energy is presented, where the P-content is varied from 0% up to 12.5%. Previously reported values for GaN by Hui and co-workers have shown a birefringence of Δn ~ 0.04, while Pezzagna and co-workers measured a value of Δn ~ 0.0425 67,77 . Moreover, Shokhovets and co-workers have shown that the birefringence is an increasing function for photon energies up to the band gap of GaN and that it varies between 0.037–0.056 68 .…”

Section: Introductionmentioning

confidence: 91%

First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys

Borovac

Tan

Tansu

2018

Sci Rep

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An investigation on the optical properties of dilute-P GaN1−xPx alloys by First-Principle Density Functional Theory (DFT) methods is presented, for phosphorus (P) content varying from 0% up to 12.5%. Findings on the imaginary and real part of the dielectric function are analyzed and the results are compared with previously reported theoretical works on GaN. The complex refractive index, normal-incidence reflectivity and birefringence are presented and a difference in the refractive index in the visible regime between GaN and GaNP alloys of ~0.3 can be engineered by adding minute amounts of phosphorus, indicating strong potential for refractive index tunability. The optical properties of the GaN1−xPx alloys indicate their strong potential for implementation in various III-nitride-based photonic waveguide applications and Distributed Bragg Reflectors (DBR).

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Birefringence of GaN/AlGaN optical waveguides

Abstract: Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides

Cited by 7 publications

References 6 publications

Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy

Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy

Investigations of the Optical Properties of GaNAs Alloys by First-Principle

First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys

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