Bis(μ-diethylphosphido-κ²P:P)bis[bis(2,4,6-trimethylphenyl)indium(III)]

Abstract

The title compound, [In2(C9H11)4(C4H10P)2], contains a centrosymmetric In2P2 core with short inter­molecular In—P bonds. This core has acute P—In—P and obtuse In—P—In bond angles compared with other [R 2InPR′2]2 analogues, due to the presence of the bulky aromatic substituents on the In atom and the non-sterically demanding ethyl substituents on the P atom.

Small Inorganic Rings in the 21st Century: From Fleeting Intermediates to Novel Isolable Entities

“…166 GaN quantum dots were prepared using a multistep procedure involving the reaction of [(Me 2 N) 2 Ga(μ-NMe 2 )] 2 (226) with ammonia to give a product formulated as [Ga(NH) 3/2 ] n which is converted into GaN quantum dots upon heating in trioctylamine at 360 °C in the presence of additional NH 3 ; 167,168 polycrystalline GaN films were also obtained by heating [Cl 2 Ga(μ-NHSiMe 3 )] 2 (227) to 500 °C. 169 The gallium(III) dihydride [H 2 Ga(μ-NH t Bu)] 2 (228) formed upon the spontaneous self-dehydrocoupling of the primary amine−gallane adduct t BuNH 2 •GaH 3 at room temperature; 170 the structure of the related gallium−amide heterocycle [H 2 Ga(μ-NMe 2 )] 2 (229) was determined in the gas phase. 171 The centrosymmetric hydrazidogallium hydride dimer [H 2 Ga(μ-NHNMe 2 )] 2 (230) can be obtained upon treatment of Me 3 N•GaH 3 with H 2 N−NMe 2 , followed by subsequent heating of 230 to give GaN clusters.…”