Bismuth layer-structured Bi4Ti3O12-CaBi4Ti4O15 intergrowth ferroelectric films for high-performance dielectric energy storage on Si substrate

Crystal structure and microwave dielectric properties of Li2(Mg1–xCux)2Mo3O12 ceramics sintered at ultra‐low temperature

“…This suggests that the grain‐size distribution is more discrete, which can have a negative effect on the dielectric properties 41 . The non‐uniformity of grain morphology is mainly attributed to two aspects: different grain sizes caused by uneven nucleation 42 and the production of a certain amount of liquid phase during the sintering process, resulting in the driving force for grain growth dispersed in the liquid phase satisfying the following formula 43 : $$$$\begin{equation}\Delta {G}_{\mathrm{V}} = 2{\gamma }_{{\mathrm{sl}}}{V}_{\mathrm{m}}\left( {\frac{1}{{{r}^*}} - \frac{1}{r}} \right),\end{equation}$$$$where γ sl and V m are the solid–liquid interface energy and the corresponding molar volume fraction, respectively, and r * is the grain size that neither dissolves nor grows. The formula shows that all grains larger than r * can grow simultaneously, resulting in a large grain difference.…”

“…This suggests that the grain-size distribution is more discrete, which can have a negative effect on the dielectric properties. 41 The non-uniformity of grain morphology is mainly attributed to two aspects: different grain sizes caused by uneven nucleation 42 and the production of a certain amount of liquid phase during the sintering process, resulting in the driving force for grain growth dispersed in the liquid phase satisfying the following formula 43 :…”