Bistabilities in pyrolytic laser-CVD of silicon and carbon

Kargl, P. B.; Arnold, N.; Bäuerle, D.

doi:10.1016/s0169-4332(96)00592-2

Cited by 10 publications

(10 citation statements)

References 17 publications

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“…A similar behavior was observed during deposition of C from CH 4 , C 2 H 2 , and C 2 H 4 onto different substrates. 8 Subsequently, we …”

Section: Oscillation Of Lines With High Aspect Ratiomentioning

confidence: 99%

“…1,2 Different types of so-called noncoherent structures ͑not related to light interference phenomena͒ were observed. [3][4][5][6][7][8] The understanding of these structures, as well as the self-consistent description of the pyrolytic LCVD itself require a knowledge of the laser-induced temperature distribution and the modeling of the growth process. In situ temperature measurements are difficult to perform, 9 mainly due to the small size of the reaction zone.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of pyrolytic laser direct writing: Noncoherent structures and instabilities

Arnold

Kargl

Bäuerle

1997

Journal of Applied Physics

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Fabrication of a low-operating voltage diamond thin film metal-semiconductor-metal photodetector by laser writing lithography Three-dimensional simulations of pyrolytic laser direct writing from gas-phase precursors are presented. They are based on a fast method for the calculation of temperature distributions induced by an energy beam in deposits of arbitrary shape. Analytical approximations, fast Fourier transform, and the multigrid technique are combined in the algorithm. Temperature dependences of the absorptivities and heat conductivities of the deposit and the substrate have been taken into account. Self-consistent modeling of the growth process allows one to explain oscillations in the height and width of lines caused by the feedback between the shape of the deposit, the temperature distribution, and the growth rate. For the deposition of W from an admixture of WCl 6 ϩH 2 and a-SiO 2 substrates, the oscillations originate from a sharp increase in the absorptivity of the deposit with temperature. With the deposition of Si from SiH 4 , or C from CH 4 , C 2 H 2 , and C 2 H 4 , onto a-SiO 2 , the oscillations are related to the large ratio of height/width of the deposit and the increase in temperature on its upper surface. This increase also explains the transition from line-type to fiber-type growth. The hysteresis of this transition with respect to laser power and scanning velocity is explained as well. The same algorithm can be used in the modeling of pyrolytic etching and e-beam microprocessing when the feedback between the temperature distributions and changes in the processing geometry is important.

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“…A similar behavior was observed during deposition of C from CH 4 , C 2 H 2 , and C 2 H 4 onto different substrates. 8 Subsequently, we …”

Section: Oscillation Of Lines With High Aspect Ratiomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling of pyrolytic laser direct writing: Noncoherent structures and instabilities

Arnold

Kargl

Bäuerle

1997

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] These techniques provide an effective way of manufacturing arbitrarily shaped three-dimensional (3D) structures. Different additive layer-by-layer manufacturing approaches exist, which make use of various materials such as polymers, waxes, ceramics, semiconductors, and metals.…”

Section: Introductionmentioning

confidence: 99%

“…Different additive layer-by-layer manufacturing approaches exist, which make use of various materials such as polymers, waxes, ceramics, semiconductors, and metals. The techniques include stereolithography, 1,2 solid ground curing, 1 selective laser sintering, 1,6 3D inkjet printing, 1 laminated object modeling, 2,7 and fused deposition modeling, 1,[8][9][10][11][12][13][14][15][16] including beam-assisted deposition techniques. [10][11][12][13][14][15] The achievable dimensions of the 3D structures strongly depend on the used technology and can range from several tens of nm to tens of lm.…”

Section: Introductionmentioning

confidence: 99%

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Gylfason

Fischer

Malm

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Nanofabrication of high aspect ratio (50:1) sub-10nm silicon nanowires using inductively coupled plasma etching J. Vac. Sci. Technol. B 30, 06FF02 (2012) Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature J. Vac. Sci. Technol. Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro-and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity.

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“…Examples of additive layer-by-Iayer manufacturing include stereolithography [2,3], solid ground curing [2], selective laser sintering [2,8], 3D inkjet printing [2], fused deposition modeling [2,[8][9][10][11][12][13][14][15][16][17] and laminated object modeling [2,18,19]. In direct laser writing, solid ground curing and stereolithography 3D, polymer structures are fabricated by a local exposure of a photosensitive polymer with light and subsequent selective dissolution of the polymer [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching

Fischer

Gylfason

Belova

et al. 2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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Abstract-In this paper we report a method for layer-by layer printing of three-dimensional (3D) silicon (Si) micro and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.

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Bistabilities in pyrolytic laser-CVD of silicon and carbon

Cited by 10 publications

References 17 publications

Modeling of pyrolytic laser direct writing: Noncoherent structures and instabilities

Modeling of pyrolytic laser direct writing: Noncoherent structures and instabilities

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching

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