Bistable nanoelectromechanical devices

Ziegler, Kirk J.; Lyons, Daniel Mark; Holmes, Justin D.; Erts, Donāts; Polyakov, Boris; Olin, Håkan; Svensson, Krister; Olsson, Eva

doi:10.1063/1.1751622

Cited by 75 publications

(76 citation statements)

References 22 publications

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“…The electrical properties of individual semiconductor nanowires [48][49][50][51][52] have been investigated by a number of research groups. To date, there are few studies on the electrical properties of organized arrays of nanowires.…”

Section: Resultsmentioning

confidence: 99%

Conductive films of ordered nanowire arrays

et al. 2004

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High-density, ordered arrays of germanium nanowires have been synthesised within the pores of mesoporous thin films (MTFs) and anodized aluminium oxide (AAO) matrices using a supercritical fluid solution-phase inclusion technique. Conductive atomic force microscopy (C-AFM) was utilised to study the electrical properties of the nanowires within these arrays. Nearly all of the semiconductor nanowires contained within the AAO substrates were found to be conducting. Additionally, each individual nanowire within the substrate possessed similar electrical properties demonstrating that the nanowires are continuous and reproducible within each pore. C-AFM was also able to probe the conductance of individual nanowires, 3-4 nm in diameter, within the MTF templates. The ability to synthesise ordered arrays of semiconducting nanowires is a key step in future bottom-up fabrication of multilayered device architectures for potential nanoelectronic and optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Conductive films of ordered nanowire arrays

et al. 2004

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“…[1][2][3][4] In particular, group IV nanowires, such as Si and Ge, are playing a big role in the development of new functional microelectronic modules, such as gate-all-around fieldeffect transistor devices, on-chip lasers and photodetectors. Recently there has been a renewed interest in Ge [5][6][7][8] for applications such as nano-electromechanical systems (NEMS) [9,10], lithium-ion batteries [11][12][13], field effect transistors (FETs) [14] and photovoltaics [15]. Like Si, Ge is a group 14 semiconductor material and exhibits certain properties that are superior to those of Si, including a higher charge carrier mobility [16] and a larger Bohr exciton radius, leading to more pronounced quantum confinement effects at higher dimensions.…”

Section: Introductionmentioning

confidence: 99%

Inducing imperfections in germanium nanowires

2017

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Access to the full text of the published version may require a subscription. Rights © Tsinghua University Press and Springer-Verlag Berlin Heidelberg2017. This is a pre-print of an article published in Nano Research. and/or interfacial manipulation. An "epitaxial defect transfer" process and catalyst-nanowire interfacial engineering is employed to induce twin defects parallel and perpendicular to the nanowire growth axis. By inducing and manipulating twin boundaries in the metal catalysts, twin formation and density is controlled in Ge nanowires. The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally, metal impurity, in the form of Sn, is injected and engineered via third-party metal catalysts resulting above-equilibrium incorporation of Sn adatoms in Ge nanowires. Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth, where the impurity Sn atoms become trapped with the deposition of successive layers, thus giving an extraordinary Sn content (> 6 at.%) in the Ge nanowires. A larger amount of Sn impingement (> 9 at.%) is further encouraged by the utilising eutectic solubility of Sn in Ge along with the impurity trapping.

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“…[1][2][3] While Si has been the material of choice for many years for nanoscale electronic devices 1 , there has recently been a renewed interest in Ge [4][5][6][7] for applications such as nanoelectromechanical systems (NEMS) 8,9 , lithium-ion batteries [10][11][12] , field effect transistors (FETs) 13 and photovoltaics 14 . Like Si, Ge is a Group 14 semiconductor material and exhibits certain…”

Section: Introductionmentioning

confidence: 99%

Engineering the Growth of Germanium Nanowires by Tuning the Supersaturation of Au/Ge Binary Alloy Catalysts

O’Regan

Biswas

O’Kelly³

et al. 2013

Chem. Mater.

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Access to the full text of the published version may require a subscription. Rights AbstractThe synthesis of Ge nanowires with very high-aspect ratios (greater than 1000) and uniform crystal growth directions is highly desirable, not only for investigating the fundamental properties of nanoscale materials, but also for fabricating integrated functional nanodevices. In this article, we present a unique approach for manipulating the supersaturation, and thus the growth kinetics, of Ge nanowires using Au/Ge bilayer films. Ge nanowires were synthesized on substrates consisting of two parts: a Au film on one half of a Si substrate and a Au/Ge bilayer film on the other half of the 2 substrate. Upon annealing the substrate, Au and Au/Ge binary alloy catalysts were formed on the Au-side and Au/Ge-side of the substrates respectively, under identical conditions. The mean lengths of Ge nanowires produced were found to be significantly longer on the Au/Ge bilayer side of the substrate compared to the Au-coated side, as a result of a reduced incubation time for nucleation on the bi-layer side. The mean length and growth rate on the bilayer side (with a 1 nm Ge film) was found to be 5.5 ± 2.3 µm and 3.7 × 10 -3 µm s -1 respectively, and 2.7 ± 0.8 µm and 1.8 × 10 -3 µm s -1for the Au film. Additionally, the lengths and growth rates of the nanowires further increased as the thickness of the Ge layer in the Au/Ge bilayer was increased. In-situ TEM experiments were performed to probe the kinetics of Ge nanowire growth from the Au/Ge bilayer substrates.Diffraction contrast during in-situ heating of the bilayer films clarified the fact that thinner Ge films,i.e. lower Ge concentration, take longer to alloy with Au than thicker films. Phase separation was also more significant for thicker Ge films upon cooling. The use of binary alloy catalyst particles, instead of the more commonly used elementary metal catalyst, enabled the supersaturation of Ge during nanowire growth to be readily tailored, offering a unique approach to producing very long high aspect ratio nanowires.

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Bistable nanoelectromechanical devices

Abstract: Access to the full text of the published version may require a subscription. Rights

Cited by 75 publications

References 22 publications

Conductive films of ordered nanowire arrays

Conductive films of ordered nanowire arrays

Inducing imperfections in germanium nanowires

Engineering the Growth of Germanium Nanowires by Tuning the Supersaturation of Au/Ge Binary Alloy Catalysts

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