Bistable switching in a nonlinear Bragg reflector

Abstract

Numerical simulations and experimental results are reported on bistable switching in a semiconductor nonlinear vertical Bragg reflector. An improved structure with an additional linear rear mirror and a phase-adjusting layer was predicted to have lower threshold for bistability than a Fabry–Perot type device. The experimental observation of bistable switching in a nonlinear Bragg reflector is reported. Achieved threshold was comparable with a nonlinear Fabry–Perot device; the simpler structure of a nonlinear Bragg device may represent an advantage with respect to growth tolerances.

Analytic expressions for the electromagnetic mode density in finite, one-dimensional, photonic band-gap structures

“…Furthermore, because of the John-Wang model [3], our results should yield practical approximations for finite 3D PBG structures with nearly spherical BZ zones. There are a number of specific applications for which our results would be readily useful, including spontaneous emission alteration in periodically layered semiconductors [7], nonlinear optical effects, such as gap solitons [11], optical bistability [12], optical limiting and switching [13],and thin-film optical isolators [14].…”

“…We note from the Cayley-Hamilton theorem [20], which states that every matrix obeys its own eigenvalue equation, that we can use Eqs. (12) and (14) to write p~. The N-period transmittance, T~=~t~~, is most easily obtained by taking the modulus squared of Eq.…”

“…So saying, our formulas can be used in the study of band-edge lasing [10];band-edge spontaneous emission enhancement in layered semiconductors [7]; nonlinear optical effects such as gap solitons [11], bistability [12], limiting and switching [13], and thin-film optical isolators [14]. The fact that the N-period DOM, pz --dk&/dao, is inversely proportional to the group velocity, Uz=dco/dk~, allows us to also provide analytical statements about the group velocity slowdown at the photonic band edge, with applications to band-edge lasing [10] and optical delay lines [7], as well as about the anomalous group velocity at midgap, responsible for the recent observations of "superluminal" tunneling times [15,16].…”

“…Now, since the eigenvalue equation(12) holds for all eigenvalues p, of M, in particular it holds for the p, t, . Inserting pii =e ' into(12), Now let us take these expressions for M and M, Eqs.…”

Electromagnetic density of modes in one-dimensional photonic crystals containing dispersive metamaterials

“…Thus, it is possible to enhance DOM near the band gap edge frequencies [3]. Controlling DOM near band gap edges finds applications in alteration of spontaneous emission in layered semiconductors [4,5], optical bistability [6], gap soliton [7], thin film isolator [8], and optical limiting and switching [9]etc. D'Aguanno et al [10] have described in detail about the different methods such as Green function technique, the Wigner phase time approach, and the EM energy density to compute and studies the properties of DOM in the PhCs.…”