Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy

Chen, Yabin; Chen, Chao‐Yu; Kealhofer, Robert; Liu, Huili; Yuan, Zhiquan; Jiang, Lili; Suh, Joonki; Park, Joonsuk; Ko, Changhyun; Choe, Hwan Sung; Ávila, J.; Zhong, Mianzeng; Wei, Zhongming; Li, Jingbo; Li, Shu-Shen; Gao, Hongjun; Liu, Yunqi; Analytis, James; Xia, Qinglin; Asensio, M. C.; Wu, Junqiao

doi:10.1002/adma.201800754

Cited by 188 publications

(235 citation statements)

References 36 publications

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“…In the monolayer limit, the performance shows relatively high carrier mobilities and large on/off ratios. [22,23] A recent paper reported that black arsenic is metastable and often stabilized by impurities; and it is very difficult to synthesize the purity black arsenic under the lab conditions. The few-layer arsenic based FET still function after exposure to air for about one month.…”

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confidence: 99%

“…[16][17][18][19][20] This characteristic leads it to a possibility for applications in optoelectronic and logical devices. [22,23] A recent paper reported that black arsenic is metastable and often stabilized by impurities; and it is very difficult to synthesize the purity black arsenic under the lab conditions. [20,21] These excellent physical properties make it a good candidate for applications in electronic devices.…”

mentioning

confidence: 99%

“…[20] Inside a single layer, each arsenic atom is covalently bonded with three adjacent atoms to form a puckered honeycomb network, while the individual layers are held together by weak van der Waals interactions, [16][17][18][19][20][21][22] as illustrated in Figure 1a. The natural mineral of orthorhombic arsenic has a black color, so named black arsenic.…”

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confidence: 99%

“…The natural mineral of orthorhombic arsenic has a black color, so named black arsenic. [22] According to the X-ray diffraction result, the extracted lattice parameters are a = 3.64 Å, b = 4.46 Å, c = 11.09 Å, and the cell volume is 180.03 Å 3 . So, bulk orthorhomic arsenic can be easily exfoliated into monolayer (arsenene).…”

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Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Zhong

Xia

Pan

et al. 2018

Adv Funct Materials

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2D elemental layered crystals, such as graphene and black phosphorus (B-P), have received tremendous attentions due to their rich physical and chemical properties. In the applications of nanoelectronic devices, graphene shows super high electronic mobility, but it lacks bandgap which impedes development in logical devices. As an alternative, B-P shows high mobility of up to about 1000 cm 2 V −1 s −1 . However, B-P is very unstable and degrades rapidly in ambient conditions. Orthorhombic arsenic (black arsenic; b-As) is the "cousin" of B-P; theoretical prediction shows that b-As also has excellent physical and chemical properties, but there is almost no experimental report on b-As. Herein, it is reported on the unique transport characteristics and stability of monolayer and few-layer b-As crystals which are exfoliated from the natural mineral. The properties of field-effect transistors (FETs) strongly depend on the thickness of crystals. In the monolayer limit, the performance shows relatively high carrier mobilities and large on/off ratios. Moreover, the b-As crystals exhibit a relatively good ambient stability. The few-layer arsenic based FET still function after exposure to air for about one month. Therefore, b-As is expected to be a promising 2D material candidate in nanoelectronic devices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802581.properties. [9][10][11] It is considered to be a more promising material than graphene in opto/ nanoelectronic devices. [1,5,6,8,9] However, the deterioration of B-P under atmospheric conditions definitely hinders its applications in practical devices. [12,13] To improve its performance, many attempts have been made. Studies have found that alloying of B-P is a good choice, such as the black arsenic-phosphorus alloy shows tunable bandgap, excellent optical properties, and good ambient stability. [14,15] Another way is to find the new alternative materials.B-As (named arsenene), as a cousin of B-P, has the similar structure configuration with B-P, which is expected to have excellent physical and chemical properties. [16][17][18] Just like most TMDCs and B-P, theoretical studies have verified that the band structures of b-As also have layer dependence. [16] Bulk layered b-As is a direct semiconductor with the bandgap of about 0.3 eV, whereas the monolayer b-As is an indirect bandgap semiconductor with the gap value of about 1-1.5 eV. [16][17][18][19][20] This characteristic leads it to a possibility for applications in optoelectronic and logical devices. Moreover, few-layer b-As is predicted to have high carrier mobility (several thousand square centimeters per volt-second). [20,21] These excellent physical properties make it a good candidate for applications in electronic devices. So far, the experimental synthesis of black arsenic crystals still faces great challenges. [22,23] A recent paper reported that black arsenic is metastable and often stabilized by impurities; and it is very difficult to synt...

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confidence: 99%

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confidence: 99%

mentioning

confidence: 99%

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Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Zhong

Xia

Pan

et al. 2018

Adv Funct Materials

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145

182

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“…Both theoretical and experimental characterization have demonstrated that B‐As is a layered material similar to B‐P, and the band structure is related to the number of layers. The bulk B‐As bandgap is about 0.3 eV, which is a direct bandgap; the single layer is about 1.5 eV, which is an indirect bandgap . Most importantly, B‐As has a stronger anisotropy .…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Zhao

Cai

Zhang

et al. 2019

Adv Funct Materials

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The discovery of graphene has stimulated the search for and investigations into other 2D materials because of the rich physics and unusual properties exhibited by many of these layered materials. Transition metal dichalcogenides (TMDs), black phosphorus, and SnSe among many others, have emerged to show highly tunable physical and chemical properties that can be exploited in a whole host of promising applications. Alongside the novel electronic and optical properties of such 2D semiconductors, their thermal transport properties have also attracted substantial attention. Here, a comprehensive review of the unique thermal transport properties of various emerging 2D semiconductors is provided, including TMDs, black‐ and blue‐phosphorene among others, and the different mechanisms underlying their thermal conductivity characteristics. The focus is placed on the phonon‐related phenomena and issues encountered in various applications based on 2D semiconductor materials and their heterostructures, including thermoelectric power generation and electron–phonon coupling effect in photoelectric and thermal transistor devices. A thorough understanding of phonon transport physics in 2D semiconductor materials to inform thermal management of next‐generation nanoelectronic devices is comprehensively presented along with strategies for controlling heat energy transport and conversion.

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Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy

Cited by 188 publications

References 36 publications

Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

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