Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Liu, Bilu; Köpf, Marianne; Abbas, Ahmad Nabil; Wang, Xiaomu; Guo, Qiushi; Jia, Yaqi; Xia, Fengnian; Weihrich, Richard; Bachhuber, Frederik; Pielnhofer, Florian; Wang, Han; Dhall, Rohan; Cronin, Stephen B.; Ge, Mingyuan; Fang, Xin; Nilges, Tom; Zhou, Chongwu

doi:10.1002/adma.201501758

Cited by 410 publications

(444 citation statements)

References 34 publications

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“…Our prediction of the thermodynamic stability of the As 1−x P x disordered alloys is found to be in line with the recent experimental syntheses of the black-phosphorus-type As 1−x P x alloys with different and tunable compositions (0.17 x 1) at elevated temperature, close to the sublimating points of the materials [64,65]. According to the reports, found in the literature [64,65], the as-synthesized black-phosphorustype As 1−x P x alloys remain metastable at low temperature, presumably due to a lack of atomic mobility of As and P atoms.…”

Section: B Mixing Thermodynamics Of Binary As 1−x P X Alloyssupporting

confidence: 89%

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

2017

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We examine the thermodynamic stability of compounds and alloys in the ternary B-As-P system theoretically using first-principles calculations. We demonstrate that the icosahedral B 12 As 2 is the only stable compound in the binary B-As system, while the zinc-blende BAs is thermodynamically unstable with respect to B 12 As 2 and the pure arsenic phase at 0 K, and increasingly so at higher temperature, suggesting that BAs may merely exist as a metastable phase. On the contrary, in the binary B-P system, both zinc-blende BP and icosahedral B 12 P 2 are predicted to be stable. As for the binary As-P system, As 1−x P x disordered alloys are predicted at elevated temperature-for example, a disordered solid solution of up to ∼75 at.% As in black phosphorus as well as a small solubility of ∼1 at.% P in gray arsenic at T = 750 K, together with the presence of miscibility gaps. The calculated large solubility of As in black phosphorus explains the experimental syntheses of black-phosphorus-type As 1−x P x alloys with tunable compositions, recently reported in the literature. We investigate the phase stabilities in the ternary B-As-P system and demonstrate a high tendency for a formation of alloys in the icosahedral B 12 (As 1−x P x ) 2 structure by intermixing of As and P atoms at the diatomic chain sites. The phase diagram displays noticeable mutual solubility of the icosahedral subpnictides in each other even at room temperature as well as a closure of a pseudobinary miscibility gap around 900 K. As for pseudobinary BAs 1−x P x alloys, only a tiny amount of BAs is predicted to be able to dissolve in BP to form the BAs 1−x P x disordered alloys at elevated temperature. For example, less than 5% of BAs can dissolve in BP at T = 1000 K. The small solubility limit of BAs in BP is attributed to the thermodynamic instability of BAs with respect to B 12 As 2 and As.

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Section: B Mixing Thermodynamics Of Binary As 1−x P X Alloyssupporting

confidence: 89%

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

2017

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“…The lack of a band gap also results in a large dark current, short carrier lifetime, and poor detector NEP. The shortcoming can be mitigated by mating graphene with semiconductors to form a heterojunction [180] or replacing graphene with narrow-gap 2-D semiconductors such as BP [197], black arsenic phosphorus [198,199], and tellurene [200]. To date, metal-catalyst-free, large-area growth of these 2-D materials on Si or dielectric substrates remains a significant technical barrier, and therefore, integration of these materials must resort to hybrid transfer processes.…”

Section: Inmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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“…The intrinsic anisotropy in BP may also add insights to the idea of "phonon-glass electron-crystal" (PGEC) 33 in thermoelectrics. The figure of merit might be further improved in BP by carrier doping or alloying with As, 34 making BP a potential material basis for high-performance thermoelectrics.…”

Section: à3mentioning

confidence: 99%

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

Liu

Choe

Chen

et al. 2017

Applied Physics Letters

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Black phosphorus (BP) is a layered semiconductor with a high mobility of up to $1000 cm 2 V À1 s À1 and a narrow bandgap of $0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. To elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons ($100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck coefficient increase with temperature, a behavior contradictory to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. The hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications. Published by AIP Publishing. [http://dx

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Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Cited by 410 publications

References 34 publications

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

First-principles prediction of stabilities and instabilities of compounds and alloys in the ternary B-As-P system

Mid-infrared integrated photonics on silicon: a perspective

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

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