Black Silicon IR Photodiode Supersaturated With Nitrogen by Femtosecond Laser Irradiation

Li, Chunhao; Wang, Xuepeng; Zhao, Ji-Hong; Zhang, Dezhong; Yu, Xinyue; Li, Xianbin; Feng, Jing; Chen, Qi‐Dai; Ruan, Shengping; Sun, Hong–Bo

doi:10.1109/jsen.2018.2812730

Cited by 34 publications

(21 citation statements)

References 42 publications

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“…It is also one of the research directions to study the effect of reducing the step of hot annealing on the preparation of black silicon materials. In 2018, C. Li et al [ 93 ] fabricated a black silicon Schottky photodiode by plating Al and Au metal electrodes on the front and back of the silicon. Figure 10 d show different structure Schottky photodetection.…”

Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

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Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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“…The infrared responsivity against reverse bias of b‐Si photodetector showed that, at wavelengths of 1310 and 1550 nm, the responsivity of the b‐Si detector was 0.58 and 0.80 A W −1 at −20 V (right inset in Figure ), comparable with 0.72 and 0.89 A W −1 of Ge photodetector, respectively. In contrast, the response of the sulfur hyperdoped silicon photodetector was reported as 50 mA W −1 at 1330 nm and 35 mA W −1 at 1550 nm, and that of nitrogen hyperdoped b‐Si as 5.3 mA W −1 for 1310 nm at 10 V reverse bias . These results break through the limits of silicon‐based photodetectors, achieving high responsivity in the telecommunication wavebands.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, ultrafast laser hyperdoped silicon (b‐Si) has attracted much interest due to its distinctive properties and potential for a range of applications . In particular, b‐Si materials hyperdoped with chalcogens (e.g., S, Se, and Te) or transition metals (e.g., Ag, Au, and Ti) have gained considerable attention due to their strong visible and infrared absorption, with great potential in intermediate‐band solar cells, light emitters, gas sensors, and photodetectors . Devices fabricated with these materials have shown a remarkable enhancement in photon responsiveness, typically some orders of magnitude higher than that of traditional silicon photodetectors at low bias voltage.…”

Section: Introductionmentioning

confidence: 99%

“…However, these excellent responsive properties are mainly maintained in the near infrared range (700–1100 nm) and decay sharply at longer wavelengths despite the high sub‐bandgap absorption. Indeed, the sub‐bandgap response of b‐Si has been reported at low reverse bias, but it was not competitive with other narrow bandgap materials . In addition, due to the extreme nonequilibrium conditions, femtosecond laser process will introduce large amounts of defects in the hyperdoped silicon surface layer, resulting in an undesired large dark current .…”

Section: Introductionmentioning

confidence: 99%

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Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Huang

Jia

et al. 2020

Advanced Optical Materials

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Silicon‐based photodetectors show attractive prospects due to their convenient preparation, high detectivity, and complementary metal–oxide–semiconductor compatibility. However, they are currently limited by low responsivity and sharp decay at sub‐bandgap wavelength. Although the aforementioned limitation can be partly solved by femtosecond laser processing, the surface defects and carrier activation rates result in a large dark current and narrow spectral response, which are unsatisfactory. Herein, rapid thermal annealing and hydrogenated surface passivation are introduced to elevate the broad‐bandgap responsivity and signal to noise ratio and to suppress the dark current. At optimal conditions, a sub‐bandgap responsivity of 0.80 A W−1 for 1550 nm at 20 V at room temperature is obtained, comparable with commercial germanium photodiodes and much higher than previously reported silicon photodiodes. Moreover, the prepared photodetector responded to spectral range from 400 to 1600 nm, with responsivity reaching 1097.60 A W−1 for 1080 nm at 20 V, which is the highest in reported silicon photodetectors. Simultaneously, the device shows competitive detectivity (1.22 × 1014 Jones at −5 V) due to the post‐processing procedures and suppressed dark current (7.8 μA at −5 V). The results show great prospects for black silicon in infrared light detection, night vision imaging, and fiber‐optic communication.

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“…They pointed out that the laser-irradiated process is relatively slow compared to other methods and that the laser-irradiated process needs to be studied further. Liu et al reported that the micro-ripple and micro-bead structures with femtosecond laser pulses in a nitrogen (N 2 ) atmosphere could increase the absorption of N-doped silicon with wavelengths from 1.1 to 2.5 µm [ 59 ]. Zhan et al studied the porous microstructures fabricated in the air and increased the absorption by changing the scan parameters [ 60 ].…”

Section: Introductionmentioning

confidence: 99%

Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

Tan

Tao

et al. 2018

Micromachines

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Owing to its extremely low light absorption, black silicon has been widely investigated and reported in recent years, and simultaneously applied to various disciplines. Black silicon is, in general, fabricated on flat surfaces based on the silicon substrate. However, with three normal fabrication methods—plasma dry etching, metal-assisted wet etching, and femtosecond laser pulse etching—black silicon cannot perform easily due to its lowest absorption and thus some studies remained in the laboratory stage. This paper puts forward a novel secondary nanostructured black silicon, which uses the dry-wet hybrid fabrication method to achieve secondary nanostructures. In consideration of the influence of the structure’s size, this paper fabricated different sizes of secondary nanostructured black silicon and compared their absorptions with each other. A total of 0.5% reflectance and 98% absorption efficiency of the pit sample were achieved with a diameter of 117.1 μm and a depth of 72.6 μm. In addition, the variation tendency of the absorption efficiency is not solely monotone increasing or monotone decreasing, but firstly increasing and then decreasing. By using a statistical image processing method, nanostructures with diameters between 20 and 30 nm are the majority and nanostructures with a diameter between 10 and 40 nm account for 81% of the diameters.

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Black Silicon IR Photodiode Supersaturated With Nitrogen by Femtosecond Laser Irradiation

Cited by 34 publications

References 42 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

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