Black silicon on emitter diminishes the lateral electric field and enhances the blue response of a solar cell by optimizing depletion region uniformity

Shen, Zhonghua; Liu, Bangwu; Xia, Yang; Liu, Jie; Lü, Jinhu; Zhong, Sihua; Li, Chaobo

doi:10.1016/j.scriptamat.2012.10.023

Cited by 32 publications

(22 citation statements)

References 16 publications

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“…11,17,19,[43][44][45][46] In addition, also pure optical applications like silicon lenses or windows for the IR and light absorbers 47 can greatly benefit from the exceptionally good antireflection effect induced by the needle-like Black Silicon nanostructure. Among the multitude of fabrication methods for Black Silicon, ICP-RIE seems to be the most reasonable choice for most of the named applications because of its very good repeatability and reliability, the excellent chemical and structural intactness of the produced structures, 20,48 and its applicability to all forms of silicon, irrespective of the degree of structural order.…”

Section: Discussionmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

112

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Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed

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Section: Discussionmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

112

View full text Add to dashboard Cite

show abstract

“…1 While surface recombination has limited bSi electrical performance for years, advances in passivation-and especially the use of atomic layer deposition (ALD)-have made it possible to obtain low surface recombination velocities in such high aspect ratio surfaces. [2][3][4][5] Consequently, research on bSi emitters has been steadily expanding in the past few years, [6][7][8][9][10] and ALD has also demonstrated effective passivation of both phosphorus 11 and boron bSi emitters. 12,13 However, most of the research involving textured emitters has been limited to emitter doping via diffusion, although a number of studies point out the necessity of a compromise in the bSi dimensions in order to limit emitter recombination.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 However, most of the research involving textured emitters has been limited to emitter doping via diffusion, although a number of studies point out the necessity of a compromise in the bSi dimensions in order to limit emitter recombination. 6,7,[14][15][16][17] In fact, excessive diffusion through the bSi increased surface area causes higher Auger recombination than in planar surfaces. 10,18 This phenomenon has been reported to result in high emitter saturation current (J 0e ) and/or in the poor blue response of nanostructured solar cells that integrate emitter on the front side (for instance, PERC and Al-BSF cells).…”

Section: Introductionmentioning

confidence: 99%

Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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“…For the Si nanostructures based solar cells, Shen et al, [38] have introduced a lateral electric field of the non-uniform p-n junction to explain the enlarged leakage current and the reduced shunt resistance. In fact, the lateral electric field of the non-uniform p-n junction produces an extra SRH recombination by increasing the capture probability of the electrons and holes, which results in the worsened leakage current and shunt resistance.…”

Section: Electrical Analysismentioning

confidence: 99%

One-step-MACE nano/microstructures for high-efficient large-size multicrystalline Si solar cells

Huang

Lin

Zeng

et al. 2015

Solar Energy Materials and Solar Cells

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Black silicon on emitter diminishes the lateral electric field and enhances the blue response of a solar cell by optimizing depletion region uniformity

Cited by 32 publications

References 16 publications

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Recombination processes in passivated boron-implanted black silicon emitters

One-step-MACE nano/microstructures for high-efficient large-size multicrystalline Si solar cells

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