Black-silicon-structured back-illuminated Ge-on-Si photodiode arrays

Schmelz, David; Steglich, Mathias; Dietrich, Kay; Käsebier, Thomas; Zeitner, Uwe D.

doi:10.1117/12.2520432

Cited by 4 publications

(6 citation statements)

References 17 publications

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“…Furthermore, besides the SiO2 layer, micro-and nanostructures, such as polarizers, diffraction gratings, antireflection structures, or plasmonic structures can be utilized on the backside to improve the light absorption and quantum efficiency of the PD [19]. One approach is to use stochastic wire-like structures, called black Si.…”

Section: Effect Of Anti-reflective Layermentioning

confidence: 99%

“…To overcome this drawback, Si substrates are used for SWIR PDs, which are transparent in the infrared range. Additionally, Si substrates have the following advantages over Ge substrates for short-SWIR PDs: 1) The mature Si microelectronics technology is beneficial to the realization of FPA circuits; 2) Si is one of the most commonly used substrates for growing the high-quality GeSn layer [16][17][18]; 3) As demonstrated by reported backside Ge PDs, it is easy to use black Si technology to enhance the quantum efficiency of PDs due to the enhancement of light absorption by black Si [19,20].…”

Section: Introductionmentioning

confidence: 99%

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High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Zhou

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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Recently, high-performance GeSn photodiodes with external light illuminated on the device top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensors usually suffer from area limitations. Here, we report highperformance back-illuminated Ge0.92Sn0.08/Ge multiple-quantumwell (MQW) p-i-n photodiode on 300-mm silicon substrate, which was realized entirely by complementary metal-oxidesemiconductor (CMOS) compatible processes. A broadband photo response between 1,000-2,200 nm was observed, and the responsivity is 0.2850 and 0.0085A/W at 1,550 and 2,000 nm, respectively. A specific detectivity larger than 10 9 cm•Hz 1/2 /W was achieved between 1,050 and 1,900 nm, covering all the conventional telecommunication bands (O to U band). Furthermore, the influence of the anti-reflective layers also was studied in detail. The result shows the black Si surface enhances more photo current between 1,000-1,500 nm while the SiO2 layer (400-nm-thickness) increases more current beyond 1,500 nm. The 3-dB bandwidth was calculated to be up to 8 GHz for a mesa with a diameter of 20 μm at -2 V. Our experiments demonstrated the high-detectivity and high-speed back-illuminated GeSn/Ge MQW photodiode with the potential applications in image sensing systems operated in the short-wave infrared (SWIR) range.

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Section: Effect Of Anti-reflective Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Zhou

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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“…Instead, the higher reflectance is caused by a transmissive scattering effect into the Si substrate when passing the b-Si structure. For higher scattering angles, the internal reflectance increases and ends up in total reflection for angles>17° [11,25,26]. Thus, portions of light may propagate several cycles through the substrate before leaving it, either transmitted or reflected.…”

Section: Uncoated Black Silicon Structuresmentioning

confidence: 99%

“…Black silicon (b-Si) nanostructures are well known for their capabilities as antireflection (AR) and light-trapping structures. As such, they have a wide range of applications, for example, in solar cells [1][2][3][4], absorbers [5][6][7], IR optics [8], photoelectrochemical (PEC) hydrogenation [9], photothermic conversion [10] or Siplatform photodetectors [11][12][13][14]. Especially in the application on solar cells, they show a significantly improved performance compared to commonly used micro-scale random pyramids [1,15,16].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of black silicon structures ALD-coated with Al₂O₃

et al. 2022

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Atomic layer deposited (ALD) Al2O3 coatings were applied on black silicon (b-Si) structures. The coated nanostructures were investigated regarding their reflective and transmissive behaviour. For a systematic study of the influence of the Al2O3 coating, ALD coatings with a varying layer thickness were deposited on three b-Si structures with different morphologies. With a scanning electron microscope (SEM) the morphological evolution of the coating process on the structures was examined. The optical characteristics of the different structures were investigated by spectral transmission and reflection measurements. The usability of the structures for highly efficient absorbers and antireflection (AR) functionalities in the different spectral regions is discussed.

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“…[ 13 ] Application of similar nanostructures to germanium sensors could extend the superior sensitivity to the NIR region, and indeed, promising preliminary results on NIR sensors with a textured surface have recently been published. [ 14–16 ]…”

Section: Figurementioning

confidence: 99%

Nanostructured Germanium with >99% Absorption at 300–1600 nm Wavelengths

Pasanen

Isometsä

Garín

et al. 2020

Advanced Optical Materials

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Near‐infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state‐of‐the‐art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. This work demonstrates a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99% in the whole UV–vis–NIR spectrum up to 1600 nm wavelength, which is a significant improvement to bare Ge wafers that reach absorption of only 63% in maximum. The process is shown to be capable of producing uniform nanostructures covering full 100 mm diameter substrates as well as wafers with etch mask openings of different sizes and shapes, which demonstrates its applicability to complementary metal oxide semiconductor (CMOS) sensor manufacturing. The results imply that nanostructured Ge has potential to revolutionize the sensitivity of Ge‐based sensors.

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Black-silicon-structured back-illuminated Ge-on-Si photodiode arrays

Cited by 4 publications

References 17 publications

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Optical properties of black silicon structures ALD-coated with Al₂O₃

Nanostructured Germanium with >99% Absorption at 300–1600 nm Wavelengths

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Black-silicon-structured back-illuminated Ge-on-Si photodiode arrays

Cited by 4 publications

References 17 publications

High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Optical properties of black silicon structures ALD-coated with Al2O3

Nanostructured Germanium with >99% Absorption at 300–1600 nm Wavelengths

Contact Info

Product

Resources

About

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Optical properties of black silicon structures ALD-coated with Al₂O₃