Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

Ryabtsev, G. I.; Bezyazychnaya, T. V.; Bogdanovich, M. V.; Parastchuk, V.V.; Yenzhyieuski, A.I.; Буров, Л. И.; Gorbatsevich, A. S.; Ryabtsev, A. N.; Щемелев, М. А.; Bezotosnyĭ, V V; Shore, K.A.; Banerjee, Shaibal

doi:10.1007/s00340-007-2912-3

Cited by 8 publications

(3 citation statements)

References 28 publications

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“…In [1,7] it was shown that in the LDA active layers the ASE fluxes propagating along (forward S FF and backward S FB ) and across (forward S SF and backward S SB ) LDA cavity axis are developing (see Fig.7). At low output mirror reflection coefficient values (7.5 -20%) the S SF and S SB fluxes are relatively high and markedly effect on the S FF and S FB fluxes.…”

Section: Peculiarities Of the Lda Output Directional Radiation Patternmentioning

confidence: 97%

“…In our previous works [1][2][3] it was ascertained that amplified spontaneous emission fluxes arisen in the LDA active layers are the parasitic process which increases the LDA threshold current and decreases the LDA output radiation power. Because of this fact it is necessary to investigate the ASE characteristics and the ways to suppress ASE fluxes in LDA active layer.…”

Section: Peculiarities Of the Lda Output Directional Radiation Patternmentioning

confidence: 99%

“…We have undertaken several attempts directed to the realization of similar approaches for the LD-pumped ytterbiumerbium glass and Nd:YAG lasers [1][2][3][4][5][6]. For example, the critical relation between the near field fill factor of the laser diode arrays (LDAs) intended for pumping the Yb,Er-glass laser (the lasing wavelength of 1.54 μm) and the laser threshold pump power was reviled theoretically and experimentally [3].…”

Section: Introductionmentioning

confidence: 98%

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LD-pumped erbium and neodymium lasers with high energy and output beam quality

Kabanov

Bezyazychnaya

Bogdanovich

et al. 2013

High-Power, High-Energy, and High-Intensity Laser Technology; And Research Using Extreme Light: Entering New Frontiers With Pet

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Physical and fabrication peculiarities which provide the high output energy and beam quality for the diode pumped erbium glass and Nd:YAG lasers are considered. Developed design approach allow to make passively Q-switched erbium glass eye-safe portable laser sources with output energy 8 -12 mJ (output pulse duration is less than 25 ns, pulse repetition rate up to 5 Hz) and beam quality M 2 less than 1.3. To reach these values the erbium laser pump unit parameters were optimized also. Namely, for the powerful laser diode arrays the optimal near-field fill-factor, output mirror reflectivity and heterostructure properties were determined. Construction of advanced diode and solid-state lasers as well as the optical properties of the active element and the pump unit make possible the lasing within a rather wide temperature interval (e.g. from minus forty till plus sixty Celsius degree) without application of water-based chillers. The transversally pumped Nd:YAG laser output beam uniformity was investigated depending on the active element (AE) pump conditions. In particular, to enhance the pump uniformity within AE volume, a special layer which practically doesn't absorb the pump radiation but effectively scatters the pump and lasing beams, was used. Application of such layer results in amplified spontaneous emission suppression and improvement of the laser output beam uniformity. The carried out investigations allow us to fabricate the solid-state Nd:YAG lasers (1064 nm) with the output energy up to 420 mJ at the pulse repetition rate up to 30 Hz and the output energy up to 100 mJ at the pulse repetition rate of of 100 Hz. Also the laser sources with following characteristics: 35 mJ, 30 Hz (266 nm); 60 mJ, 30 Hz (355 nm); 100 mJ, 30 Hz (532 nm) were manufactured on the base of the developed Nd:YAG quantrons.

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Section: Peculiarities Of the Lda Output Directional Radiation Patternmentioning

confidence: 97%

Section: Peculiarities Of the Lda Output Directional Radiation Patternmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

LD-pumped erbium and neodymium lasers with high energy and output beam quality

Kabanov

Bezyazychnaya

Bogdanovich

et al. 2013

High-Power, High-Energy, and High-Intensity Laser Technology; And Research Using Extreme Light: Entering New Frontiers With Pet

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Loss coefficient for amplified luminescence of laser diode arrays

et al. 2011

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A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.Introduction. High-power laser diode arrays (LDAs) are coming into ever wide use as compact, highly efficient sources of optical excitation for solid state lasers [1][2][3]. Reducing the energy demand by these emitters requires optimization of the parameters of the LDAs, as well as of the solid state lasers. The power of modern LDAs used as pumps is approaching 80-150 W [1, 4]. These relatively high LDA powers have been achieved by substantial increase in the length of the cavities and the total widths of the heterostructure lasing elements. In most cases of practical interest, the LDA is characterized by a relatively high area of the active layer of the laser heterostucture. Thus, it is to be expected that, in accordance with [5-10], intense fluxes of amplified luminescence should develop in the active layers of LDAs; these result in an increase in the threshold and a reduction in the laser output power. It has been shown [5, 6, 8-10] that the AL fluxes for single laser diodes (with a single emitting region, or strip contact) can be analyzed by introducing an AL loss coefficient α lum determined from the balance between emission, amplification, and absorption of spontaneous emission ]11]. The value of α lum depends on many factors, in particular, on the composition of the active layer, the geometry of the laser structure, the excitation conditions, etc. Thus, as opposed to the loss coefficient for the laser emission, finding α lum is a rather complicated task in most cases of practical importance. This paper deals with the determination of the loss coefficient for AL produced in the active layer of highpower LDAs with as many as a few hundred regions. The resulting values of α lum can be used to estimate how much AL affects the threshold, dynamic, and power properties of LDAs and to determine methods for further improvement in the characteristics of LDAs and of diode pumped solid state lasers.Propagation of Fluxes of Amplified Luminescence in LDAs. The AL characteristics of concern for the parameters of LDAs (output wavelengths 940-980 nm) used to pump solid state erbium lasers are studied here. These LDAs are generally based on InGaAs/GaAs/AlGaAs heterostructures with two quantum-dimension...

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