Blistering kinetics of GaN by hydrogen implantation at high temperature

Investigation of blistering process in H-implanted semipolar GaN

“…1a). This blister size range is comparable to the values reported by Woo et al [9] and in our previous work on polar GaN [10].…”

“…This is due to the anisotropy of the Si lattice and the H agglomeration process [6,7]. Likewise, in III-nitride semiconductors such as polar (0 0 0 1) GaN, H-implantation-induced defects are shown to be passivated by the implanted hydrogen in a definite composition [8,9]. This creates various H-induced defect (HID) complexes such as V N H n and V Ga H n [8].…”

“…This creates various H-induced defect (HID) complexes such as V N H n and V Ga H n [8]. These HID complexes become thermodynamically unstable at temperatures (T HID ) of $400°C [8][9][10]. T HID can be the post-implantation annealing (PIA) temperature (T a ), or the local temperature of the thick GaN/sapphire substrate during the H-implantation at elevated temperature [10].…”

“…Nucleation and growth of HID complexes in GaN above T HID cause the release of the trapped hydrogen [8][9][10]. Released hydrogen diffuses, agglomerates and eventually forms two-dimensional planar extended defects (nanovoids, microcracks) in the damage region [8,10].…”

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

“…Hence the nanovoids served as precursors to microcrack formation and were essential for the blistering process. 60,61 In order to achieve thin-film layer transfer, 2-inch-diameter free-standing (FS) GaN wafers were implanted with 100-keV H 2 + ions at a dose of 1.3 9 10 17 cm À2 at room temperature. However, after H-implantation of FS-GaN, the bow of the wafers increased drastically to about 35 lm from an initial value of 1 lm to 2 lm (Fig.…”