BLOκ/sup TM/-a low-κ dielectric barrier/etch stop film for copper damascene applications

Xu, Pingping; Huang, Keqing; Patel, A.; Rathi, Sudha; Tang, Bao-Jun; Ferguson, J. B.; Huang, Jen‐How; Ngai, Chris; Loboda, Mark J.

doi:10.1109/iitc.1999.787093

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…It is used, e.g., as a wear-resistant material, as a heterogeneous catalyst, and in the production of semiconductors. There, SiC layers are deposited as low-k copper diffusion barriers by the application of organic precursors in plasma processes [1–2], and preventing the formation of SiC nanoparticles as a defect source is a challenge in this established industrial process. But, SiC nanoparticles also exhibit properties different from the bulk material and allow the creation of composite materials with new properties.…”

Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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SummaryWe describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.

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Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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Spectroscopic ellipsometry characterization of multilayer dielectric stacks on the non-ideal substrates in the microelectronics industry

Likhachev

2024

J. Micro/Nanopattern. Mats. Metro.

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Spectroscopic ellipsometry has been widely used as one of the metrology methods of choice in various industries: microelectronics, photovoltaic, optoelectronics, flat panel display, etc. We present an example of the characterization of dielectric multilayer structures on the substrates with unintended surface modifications involving macroscopic roughness. We assume that under our inspection conditions, the effect of macrorough surfaces can be treated as the presence of a specially designed overlayer on top of the ordinary substrate. A systematic procedure was then proposed to simulate the dielectric response of the overlayer. This approach is quite useful in a practical sense and provides more accurate process monitoring and control in a production environment.

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BLOκ/sup TM/-a low-κ dielectric barrier/etch stop film for copper damascene applications

Cited by 2 publications

References 4 publications

Formation of SiC nanoparticles in an atmospheric microwave plasma

Formation of SiC nanoparticles in an atmospheric microwave plasma

Spectroscopic ellipsometry characterization of multilayer dielectric stacks on the non-ideal substrates in the microelectronics industry

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