Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes

Abstract

Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

“…The first LED was made of SiC material in 1927 2 . Jan et al 3 investigated blue electroluminescence from an SiC tunneling diode. Strong electroluminescence in blue range was observed by Lebedev et al 4 .…”

“…The spectral regions at 3.02 eV and 3.10 eV are caused by the donor-acceptor transition between N and Al 21,22 . The spectral region at 2.38 eV is ascribed to donoracceptor-pair recombination between N donors and Al acceptors levels, too 3 . The transitions between N donors and B acceptors is responsible for EL at 1.88 eV 5 .…”