Blue electroluminescence from MOS capacitors with Si-implanted SiO2

Matsuda, T.; Nishihara, Kiyoshi; Kawabe, Masaharu; Iwata, Hideyuki; Iwatsubo, S.; Ohzone, T.

doi:10.1016/j.sse.2004.05.058

Cited by 20 publications

(26 citation statements)

References 59 publications

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“…2. Similar I-V and C-V characteristics to the previous results are obtained [3,4]. The EL measurement system consists of a monochromator and a CCD camera cooled at -70 °C.…”

supporting

confidence: 68%

“…Consequently, the MOS devices with Si-implanted SiO 2 have potentiality to integrate both the EL device and the high density Non-volatile memories on a single Si CMOS LSI chip [1,2]. Though visible EL from Si-implanted MOS capacitors have been reported [3,4], EL mechanisms and effects of process conditions still need further studies. In this work, spectrum analysis of EL from Si-implanted MOS capacitors is presented and effects of Si implantation and annealing conditions are discussed for EL mechanism.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Spectrum analysis of electroluminescence from MOS capacitors with Si-implanted SiO<inf>2</inf>

Matsuda

Nohara

Hase

et al. 2009

2009 International Semiconductor Device Research Symposium

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A device with Si rich gate oxide has attractive characteristics such as visible electroluminescence (EL) and current-voltage (I-V) hysteresis. Consequently, the MOS devices with Si-implanted SiO 2 have potentiality to integrate both the EL device and the high density Non-volatile memories on a single Si CMOS LSI chip [1,2]. Though visible EL from Si-implanted MOS capacitors have been reported [3,4], EL mechanisms and effects of process conditions still need further studies. In this work, spectrum analysis of EL from Si-implanted MOS capacitors is presented and effects of Si implantation and annealing conditions are discussed for EL mechanism. Fig. 1 gives a schematic cross section of a MOS capacitor with Si-implanted gate SiO 2 . The 30 nm thick thermal SiO 2 was grown on an n + -type (100) Si substrate of 0.02 cm (10 18 cm -3 ). Si ions were implanted into the SiO 2 , followed by N 2 annealing at 900 or 1000 °C for 30 min. The aluminum film was formed on the backside for ohmic contact. Finally, 15 nm thick Au film of 1.5 mm in diameter was sputter-deposited on the SiO 2 as a transparent electrode. Eight kinds of Siimplanted MOS capacitors and reference samples without implantation were fabricated as shown in Fig. 2. Similar I-V and C-V characteristics to the previous results are obtained [3,4]. The EL measurement system consists of a monochromator and a CCD camera cooled at -70 °C. The EL spectrum data were corrected for the total wavelength response curve of the system. EL spectra were measured under the constant gate currents (J G ) for the accumulation conditions. Fig. 3 shows measured EL spectra for n5b-L and n5b-H, which have different annealing temperature of 900 and 1000 °C, respectively. Both devices give similar and the highest peak at photon energy of about 2.7 eV (blue EL of 460 nm wavelength). The effect of annealing temperature on EL spectra is relatively small for the measured devices. Fig. 4(a) -(d) shows EL spectra for the devices implanted by the different energy and Si dose. The solid lines in Fig. 4 shows the calculated curves fitted by five Gaussian

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“…2. Similar I-V and C-V characteristics to the previous results are obtained [3,4]. The EL measurement system consists of a monochromator and a CCD camera cooled at -70 °C.…”

supporting

confidence: 68%

mentioning

confidence: 99%

Spectrum analysis of electroluminescence from MOS capacitors with Si-implanted SiO<inf>2</inf>

Matsuda

Nohara

Hase

et al. 2009

2009 International Semiconductor Device Research Symposium

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“…2͒. 46 Lin et al conducted both EL and PL ͑ = 325 nm͒ experiments on both Si-implanted SiO 2 and PECVD grown Si-rich SiO x samples 47 and they detected on the two kinds of samples the presence of SiODC ͑labeled neutral oxygen vacancy in their paper͒ and NBOHC. Thus, in the case of PL experiments, one needs an excitation source with an appropriate energy, higher than the absorption edge, to observe the reported contributions.…”

Section: Discussionmentioning

confidence: 99%

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Cueff

Labbé

Dierre

et al. 2010

Journal of Applied Physics

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Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes Appl. Phys. Lett. 97, 081109 (2010); 10.1063/1.3483771Resonant structures based on amorphous silicon suboxide doped with Er 3 + with silicon nanoclusters for an efficient emission at 1550 nm Current transport and electroluminescence mechanisms in thin SiO 2 films containing Si nanocluster-sensitized erbium ionsThis study reports on the investigation and characterization of the different emitting centers within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon oxide ͑SRSO:Er͒ thin films, fabricated by magnetron cosputtering at 500°C, were analyzed by means of cathodoluminescence. The CL spectra of SRSO, Er-doped SiO 2 and SRSO:Er were recorded and compared for various annealing temperatures. It was found that some specific optically-active point-defects called silicon-oxygen-deficient centers ͑SiODCs͒ are present in all kinds of samples. In the layers containing some excess Si, the phase separation between Si nanoclusters ͑Si-ncs͒ and SiO 2 is observed when the annealing temperature reaches and exceeds 900°C. The formation of Si-nc increases with annealing at the expense of SiODCs that was assumed to act as seeds for the growth of Si-nc. For SRSO:Er samples, the contribution of SiODCs overlaps that due to Er 3+ transitions in the visible range. The emissions from SiODCs are drastically reduced when an SRSO sample is doped with Er ions, whereas the Er emissions in the visible range start to be distinctly observed. We propose a scenario of energy transfer from SiODCs toward the Er ions, especially as the emissions from the Si-based entities ͑SiODCs, Si-nc͒ and from some transitions of Er ions are located in a same visible broad range.

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“…Although the origins for the above-mentioned EL bands are still under debate, the following mechanisms are popularly accepted in the literature, and thus our discussions will be also based on these mechanisms. The ~460nm (~2.7 eV ) band is ascribed to the NOV defect which was proposed for the EL band observed from pure silica glass [238] and Si + -implanted SiO 2 films [118,138,139,148,150,227,230,237]. It has been known that the NBOHC defects in SiO 2 can emit light at around 2 eV (~610 nm) [43,118,139,150,230,234,237].…”

Section: El Mechanismsmentioning

confidence: 85%

“…on the development of electroluminescence (EL) devices based on Si nanocrystals for the purpose of the realization of electrical driven Si-based lasers. Recently, visible electroluminescence from nanoscaled Si materials has been demonstrated[121,[138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154][155]. Even a possibility of electrically driven ultraviolet light emission from Si + -implanted SiO 2 films was predicted[153].…”

mentioning

confidence: 99%

Optical and optoelectronic properties of Si nanocrystals embedded in dielectric matrix

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Blue electroluminescence from MOS capacitors with Si-implanted SiO2

Cited by 20 publications

References 59 publications

Spectrum analysis of electroluminescence from MOS capacitors with Si-implanted SiO<inf>2</inf>

Spectrum analysis of electroluminescence from MOS capacitors with Si-implanted SiO<inf>2</inf>

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Optical and optoelectronic properties of Si nanocrystals embedded in dielectric matrix

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