Blue electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/

Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO 2 thin films

“…[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Strong photoluminescence in the range from red to blue has been observed from Si + -implanted SiO 2 films by a lot of research groups although the mechanism of the luminescence is not exclusively attributed to the quantum confinement effect of the nc-Si embedded in SiO 2 . [10][11][12][13][14][15][16][17][18][21][22][23][24][25] Recently, visible electroluminescence from Si + -implanted SiO 2 films has also been demonstrated. [16][17][18][22][23][24] Even a possibility of electrically driven ultraviolet light emission from Si + -implanted SiO 2 films was predicted.…”

“…[10][11][12][13][14][15][16][17][18][21][22][23][24][25] Recently, visible electroluminescence from Si + -implanted SiO 2 films has also been demonstrated. [16][17][18][22][23][24] Even a possibility of electrically driven ultraviolet light emission from Si + -implanted SiO 2 films was predicted. 22 In the most studies focused on the luminescence properties of the nc-Si embedded in an oxide matrix, the authors employed silica glass or SiO 2 films as thick as hundreds of nanometers.…”

“…[16][17][18][22][23][24] Even a possibility of electrically driven ultraviolet light emission from Si + -implanted SiO 2 films was predicted. 22 In the most studies focused on the luminescence properties of the nc-Si embedded in an oxide matrix, the authors employed silica glass or SiO 2 films as thick as hundreds of nanometers. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The thick oxide films are not suitable to fabricate efficient light emitting devices, because a higher oxide thickness indicates a poorer carrier injection.…”

“…22 In the most studies focused on the luminescence properties of the nc-Si embedded in an oxide matrix, the authors employed silica glass or SiO 2 films as thick as hundreds of nanometers. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The thick oxide films are not suitable to fabricate efficient light emitting devices, because a higher oxide thickness indicates a poorer carrier injection. In practical, in order to achieve efficient carrier injection into the Si + -implanted layers and make EL intensity strong enough, SiO 2 thin films less than 100 nm must be employed as the base material for Si ion implantation.…”

Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p–i–n thin-film LEDs fabricated on c-Si

“…However, the bulk silicon has an indirect energy bandgap and is, therefore, highly inefficient to be a light source, and this necessitates the use of other materials for optical emitters. Therefore, several alternatives have been proposed, aiming at Si-based PL (photoluminescence)/EL (electroluminescence) devices for optoelectronic applications, e.g., porous silicon (PS) in Au/p-PS/Si structures [1], hydrogenated amorphous alloys [2], Ge-crystal-doped silica glass fabricated by a sol-gel method [3], SiO 2 -doped Si films [4], and ion-implantation of Si/Ge/Sn [5][6][7][8][9] in thermal SiO 2 , etc.…”