Blue emission from CaS:Cu,F thin-film electroluminescent device fabricated on Si substrate

Abstract

Thin-film electroluminescent (TFEL) devices were fabricated on Si substrates by using SiO2 and Y2O3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850°C for 10min in Ar showed a purple EL with a peak at 425nm. Commission Internationale de l’Eclairage (CIE) color coordinates of x=0.217, y=0.223 under driving at 220V0−p of 1kHz trapezoidal wave. The purple EL from CaS:Cu TFEL device could be achieved, although luminance was weak, and a little longer wavelength component was included.

Recent Development in Sensitizers for Lanthanide-Doped Upconversion Luminescence

“…Cu 2+ -doped materials have exhibited abundant downshifting emissions ranging from UV, blue, green, red, to NIR, corresponding to the 3d4s → 3d electron transitions. − Aidilibike et al first reasoned that UCL of Cu 2+ could be achieved through a three-photon excitation process in view of the energy gap . Indeed, the blue UCL at 420 nm was observed in CaF 2 :Yb/Cu under 978 nm excitation, which was assigned to the 3d 8 4s 1 → 3d 9 transition of Cu 2+ .…”