Blue InGaN-based laser diodes with an emission wavelength of 450 nm

Abstract

Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, with a prominent exception of far-IR and THz quantum cascade lasers. For these devices, however, metal waveguides already represent the state of the art, and the guiding mechanism in them has far more in common with a ubiquitous transmission line than with plasmonics.Cascade 250.5403 Plasmonics

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode

“…These results are in agreement with the experimental results observed previously by Nakamura et al (Nakamura et al, 1998a;Nakamura et al, 2000) in which they studied the laser performance of several laser diodes with an emission wavelength of 390-450 nm as a function of the number of InGaN well layers and found that the lowest threshold current was obtained when the number of InGaN well layers was two.Moreover, in another work they observed that when the number of InGaN well layers of the laser diodes with emission wavelengths longer than 435 nm was varied from one to three, the lowest threshold current was obtained when the number of well layers was one and the threshold current increased when the number of InGaN well layers was increased. This phenomenon was attributed to the dissociation of the high indium content InGaN well layer at a high growth temperature of 750 0C due to a high InGaN dissociation pressure.…”

“…A maximum output power of 16.6 mW and lowest threshold current of 13.1 m A were obtained when the quantum well number was two. These results are in line with the other experimental results obtained by many researchers (Nakamura et al, 1998b;Nakamura et al, 2000). www.intechopen.com the barriers is increased from 5nm to 9nm the internal field in the barriers is reduced.…”

Doped nanoparticles for optoelectronics applications

“…In the first generation of commercialized w-LEDs 400 nm blue/violet emission from InGaN quantum wells was mixed with a yellow emission of YAG:Ce phosphor to achieve an impression of a white color [3,4]. This concept (hybrid LED) is still used in recent more efficient w-LEDs.…”

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

“…Heteroepitaxially grown InGaN-based multiple quantum wells (MQWs) are basic structures for blue and UV laser diodes (LDs) [1,2]. Despite of rapid commercialization of these structures, InGaN-based LDs are still of high cost, have low output power, and relatively short lifetimes.…”