Blue Laser Diodes Fabricated on<i>m</i>-Plane GaN Substrates

Tsuda, Yuhzoh; Ohta, Mitsuo; Vaccaro, Pablo O.; Ito, Shigetoshi; Hirukawa, Shuichi; Kawaguchi, Yoshinobu; Fujishiro, Y.; Takahira, Yoshiyuki; Ueta, Yoshihiro; Takakura, Teruyoshi; Yuasa, Takayuki

doi:10.1143/apex.1.011104

Cited by 50 publications

(35 citation statements)

References 18 publications

(23 reference statements)

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“…The resulting high lattice mismatch of the InGaN-layer leads to low crystal quality and the compressive strain causes high piezoelectric fields in [0001] direction. Therefore, several groups have studied the growth of longer wavelength InGaN laser diodes in different crystallographic axes like m-plane or semi-polar GaN substrates to avoid the piezoelectric polarization in [0001] direction [1][2][3]. C-plane GaN substrates are much lower in price compared to non-polar GaN substrates.…”

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confidence: 99%

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Queren

Avramescu

Schillgalies

et al. 2009

Phys. Status Solidi (c)

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We have analyzed the quantum well stability of blue‐green emitting laser diodes grown on c ‐plane GaN substrates. Different parameters such as the material composition of the surrounding layers of the quantum well and the number of quantum wells were varied. We observed a strong influence of the barrier material composition (AlGaN, GaN, InGaN) on the quality of In rich quantum wells. Our preferred barrier material is GaN. In contrast InGaN barriers result in a higher defect density of 9.6 × 106 cm–2 in the quantum well whereas GaN barriers show a defect density of 1.8 × 106 cm–2. High indium content quantum wells with good crystalline quality were grown by improving the structure of the complete active region. Further enhancement could be achieved by using a double quantum well structure instead of a single quantum well structure. This offers the advantage that the wavelength shift is strongly reduced as a result of the lower current density in each quantum well. With our improvements we could realize laser diodes emitting at 475 nm with threshold current densities of 12 kA/cm2 and a slope efficiency of 500 mW/A. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Queren

Avramescu

Schillgalies

et al. 2009

Phys. Status Solidi (c)

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“…Together with the piezoelectric field, the spontaneous field therefore contributes to the quantum confined Stark effect (QCSE) [6], which causes a decrease in the effective bandgap and a strongly reduced oscillator strength [7] in quantum well structures and therefore has a strong influence on optical and electrical properties in heterostructures. To avoid the reduced emission intensity caused by the electric fields, heterostructures grown on non-polar surfaces like the m-plane ½1100 gain in importance [8,9]. Due to the crystal structure and the symmetry of the piezoelectric tensor the electric fields in m-plane samples are perpendicular to the growth direction.…”

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confidence: 99%

Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures

Thomsen

Jönen

Rossów

et al. 2011

Physica Status Solidi (b)

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We present a UHV cathodoluminescence study of the spontaneous polarization field in polar [0001] and nonpolar ½1100 GaN/GaInN single quantum well structures. Employing electron-stimulated desorption a descreening of the spontaneous field in the polar c-plane samples was observed, which counteracts the piezoelectric field in the quantum well. While in c-plane samples a strong blueshift of the emission energy takes place and a drastic increase of emission intensity occurs, no change of the QW emission energy and intensity from m-plane samples was detected. The different behaviour under the same experimental conditions can only be explained with the absence of the spontaneous polarization field in the nonpolar ½1100 m-direction.

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“…The laser diodes consist of heterostructures of lattice-mismatch materials, such as AlGaN and InGaN, which cause lattice strain. Complicated strain distribution in real devices should exist because ridge waveguide structures are formed by dry etching to obtain laser oscillation [1][2][3]. It is important to clarify the microarea strain distribution in real devices to improve device performance.…”

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Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction

Yokogawa

Kato

Kimura

et al. 2010

phys. stat. sol. (b)

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Microarea strain distribution in real ridge waveguide laser diodes composed of InGaN/AlGaN/GaN lattice-mismatched heterostructure have been studied by high-resolution microbeam X-ray diffraction using highly collimated sub-mm beam. By the microarea mapping of X-ray diffraction, we confirmed the distribution change of lattice strain around ridge stripe region due to the change of biaxial tensile strain of p-type AlGaN layer. We found that the strain distribution in the ridge waveguide laser diode is not uniform around the ridge stripe region.Microarea mapping of X-ray rocking curves using asymmetric (10À14) reflection.

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Blue Laser Diodes Fabricated onm-Plane GaN Substrates

Cited by 50 publications

References 18 publications

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures

Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction

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